In this paper, copper indium gallium diselenide (CIGS) thin films were deposited by a hydrazine-free solutions method. In the proposed method, acetylacetonate salts and Se powder were simply dissolved in triethylenetetramine under ambient conditions, respectively. These two solutions were mixed in a certain percentage to form the final CIGS precursor solution. CIGS films were obtained by a drop-coating method and subsequently annealed in nitrogen atmosphere. The facile formation of the precursor solution without the need to prefabricate nanoparticles enables a rapid and easy processing. The high stability of the solution in air further ensures the precursor preparation and the film deposition in ambient conditions without a glove box. The crystal structure, morphology, composition, electronic state, optical, and electrical qualities of CIGS films were characterized by XRD, SEM, EDS, XPS, UV-vis, and I-V. The easy preparation and low-cost nature of the proposed strategy make it quite attractive. The proposed synthesis strategy developed in this work may be used as a general process for low-cost deposition of CIGS film and may have bright application prospects in highefficiency, yet low-cost, photovoltaic areas in the future.