2020
DOI: 10.1016/j.mssp.2019.104754
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Facile construction of djembe-like ZnO and its composite with g-C3N4 as a visible-light-driven heterojunction photocatalyst for the degradation of organic dyes

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Cited by 70 publications
(34 citation statements)
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“…The absorption edge of the CN sample is about 470 nm and that of the ZO/CN series samples are about 400 nm, which indicates the intrinsic absorption of g-C 3 N 4 Fig. 4 The EDXS measurement of the ZO/CN-3 sample: a The scanning area of the ZO/CN-3 sample for element mapping and b The detailed element composition and ZnO, respectively [34]. With the increase of hydrothermal time, the intrinsic absorption of the ZO/CN series samples increases gradually in the UV region, which is due to the synergistic effect of the dissolution of ZnO seed particles and the growth of ZnO nanorods.…”
Section: Resultsmentioning
confidence: 99%
“…The absorption edge of the CN sample is about 470 nm and that of the ZO/CN series samples are about 400 nm, which indicates the intrinsic absorption of g-C 3 N 4 Fig. 4 The EDXS measurement of the ZO/CN-3 sample: a The scanning area of the ZO/CN-3 sample for element mapping and b The detailed element composition and ZnO, respectively [34]. With the increase of hydrothermal time, the intrinsic absorption of the ZO/CN series samples increases gradually in the UV region, which is due to the synergistic effect of the dissolution of ZnO seed particles and the growth of ZnO nanorods.…”
Section: Resultsmentioning
confidence: 99%
“…e MB degradation process was further investigated by the reaction kinetics [39,41]. e process was fitted via the following equation:…”
Section: Uv-vis Diffuse Reflectance Spectroscopy Analysismentioning
confidence: 99%
“…e enhanced photocatalytic activity of g-C 3 N 4 @ZnO nanocomposite under visible-light irradiation can be explained as follows (Figure 8): e band positions of the g-C 3 N 4 @ZnO can be calculated by the following empirical formulas [25,41,52]:…”
Section: Advances In Materials Science and Engineeringmentioning
confidence: 99%
“…Among the semiconductor materials, ZnO is direct wide bandgap (3.37 eV) semiconductor with high excitation-binding energy of 60 meV. It has been received enormous attention owing to its high photostability and excellent photocatalytic activity [21][22].…”
Section: Introductionmentioning
confidence: 99%
“…Though, the poor photocatalytic performance of ZnO under visible light illumination due to wide bandgap, its application as photocatalyst has been restricted, moreover, high recombination rates of photogenerated charge carriers further limits its activity [21].…”
Section: Introductionmentioning
confidence: 99%