2018
DOI: 10.1007/s10854-018-0059-0
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Facile hydrothermal assisted synthesis of time dependent Cu2S thin films for efficient photoelectrochemical application

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Cited by 14 publications
(11 citation statements)
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“…The configuration of the Cu 2 Zn 1− x In x Sn(S,Se) 4 thin film occurs when the ionic products of the Cu + , Zn 2+ , In 3+ , Sn 4+ , S 2− and Se 2− ions exceeds to the solubility product of the Cu 2 Zn 1− x In x Sn(S,Se) 4 material. 42 The preparative parameters for the fabrication of CZITSSe are tabulated in Table S1 (ESI†).…”
Section: Resultsmentioning
confidence: 99%
“…The configuration of the Cu 2 Zn 1− x In x Sn(S,Se) 4 thin film occurs when the ionic products of the Cu + , Zn 2+ , In 3+ , Sn 4+ , S 2− and Se 2− ions exceeds to the solubility product of the Cu 2 Zn 1− x In x Sn(S,Se) 4 material. 42 The preparative parameters for the fabrication of CZITSSe are tabulated in Table S1 (ESI†).…”
Section: Resultsmentioning
confidence: 99%
“…27,39 The peaks at 2y values of 26.30, 37.58 and 51.301 represent the peaks of FTO in the respective XRD patterns. 3 Debye Scherrer's equation was helpful to calculate the crystallite size of the SnS 2 thin films 40 (eqn ( 8)). size.…”
Section: Snðtartrateþmentioning
confidence: 99%
“…Peaks for C1s at 284.56eV and O1s at 532.07 can be ascribed to adventitious carbon in residue form, which was taken as a reference to calibrate the binding energies of other elements and atmospheric oxygen, respectively, which are slightly altered due to exposure of the film to the open atmosphere. 3 Fig. 6(b) shows the core level spectrum of Sn3d wherein peaks concentrated at 495.74 eV and 487.13 eV represent Sn Fig.…”
Section: Snðtartrateþmentioning
confidence: 99%
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