Facile method to prepare CdS nanostructure based on the CdTe films

Ma, Ligang; Chen, Yuehui; Wei, Zihan; Cai, Hu; Zhang, Fengming; Wu, Xiaoshan

doi:10.1016/j.apsusc.2015.05.024

Cited by 15 publications

(10 citation statements)

References 40 publications

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“…The sharp emission peak at 521 nm (2.38 eV) is assigned to the near band edge emission from the CdS film. And this emission peak becomes weaker and then disappears at annealing temperature higher than 500 °C, which is because that the intrinsic emission peak of CdS (521 nm) is submerged in the strong red emission band45. A broad emission peak is centered at 720 nm, and as the annealing temperature increases it shifts gradually to 632 nm, and then to 692 nm.…”

Section: Resultsmentioning

confidence: 99%

Catalyst- and template-free low-temperature in situ growth of n-type CdS nanowire on p-type CdTe film and p-n heterojunction properties

Cai

et al. 2016

Sci Rep

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CdS is an important semiconductor used in optoelectronic devices. Simple techniques for growing CdS nanostructures are thus essential at a low cost. This study presents a novel method for growing singlecrystal n-type CdS nanowires on p-type CdTe films by thermal annealing in an H 2 S/N 2 mixed gas flow, which does not require the help of a catalyst or template. The formation process and growth mechanism of the nanowires are investigated. Well-dispersed whiskerlike CdS nanostructures are obtained at an appropriate annealing temperature and duration. We suggest that the stress-driving mechanism of nanowire formation may contribute to the growth of CdS nanowires, and that the evaporation of Te through the boundaries of the CdS grain seeds plays an important role in the sustainable growth of nanowire. In addition, CdS/CdTe heterojunction device is fabricated on Mo glass. The I-V characteristic of the heterojunction in dark shows typical rectifying diode behavior. The turn-on voltage can be regulated by annealing conditions. Meanwhile, the obvious photovoltaic effect is obtained on the in situ growth heterojunction prepared at low annealing temperature. Hence, this is a new fabricated method for CdTe-based materials in the field of energy conversion.CdS is a well-studied semiconductor with versatile properties, such as a direct band gap of 2.4 eV at room temperature, a high refractive index, excellent transport properties and good chemical and thermal stability. It has been used extensively in photovoltaic devices, light-emitting diodes in flat panel displays, transistors, and logic gates 1-3 . Low-dimensional CdS nanostructures, such as nanorods, nanowires, and nanotubes, have attracted increasing attention because of their superior optical, physical, electronic and catalytic properties compared with traditional thin film and bulk materials [4][5][6] . A wide range of applications for nanodevices and nanosystems based on these CdS nanostructures has recently been explored, including a thin film transistor fabricated on CdS nanoribbons 4 , and chemical vapor deposition (CVD) [15][16][17] . Although each of these methods has its own advantages, most involve a solution process or organic solvents 13,18 , and the reaction process is uncontrollable. The CVD method is known to be effective in the large-scale fabrication of CdS nanostructures. However, due to the high sublimation temperature of CdS powder, the growth temperature of CdS nanostructures is as high as 800 °C 12,19 , and the growth process requires the use of an Au catalyst 20 . Unfortunately, Au functions as an impurity, trapping electrons and holes in the nanostructure, and affecting the performance of the device. Templates, such as anodic aluminum oxide 9,21 , which are used to prepare nanowires, can also yield better CdS arrays. However, this method also needs Au catalyst to grow nanostructure 9 . So, an effective method

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Section: Resultsmentioning

confidence: 99%

Catalyst- and template-free low-temperature in situ growth of n-type CdS nanowire on p-type CdTe film and p-n heterojunction properties

Cai

et al. 2016

Sci Rep

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“…65-3414, while that located at 31.7 o is related to the orthorhombic structure of CdS according to JCPDS card No. 43-0985. , In addition, the diffraction peaks at 18 and 29.6 o belong to the monoclinic structure of S according to JCPDS card No. 34-0941.…”

Section: Resultsmentioning

confidence: 99%

Dielectric and Conductivity Relaxation of rGO@CdS Nanocomposites via In Situ Assembly of CdS Nanoparticles on an rGO Layer

Yang

et al. 2020

J. Phys. Chem. C

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Cadmium sulfide (CdS) as a multifunction semiconductor is widely known for photocatalysis and solar cell applications. Herein, CdS nanoparticles were successfully fabricated in situ on a graphite oxide (GO) layer by a low-cost chemical bath deposition method. Here, GO acts as a “substrate.” The microstructure and morphology of the nanocomposites with different amounts of GO added were studied via a series of characterization approaches. It was found that the size of CdS nanoparticles and the degree of reduction of GO can be effectively regulated by controlling the amount of GO added. Finally, the dielectric and conductivity relaxation of nanocomposites was studied. Two visible relaxation processes occurred in the low and high frequencies, and the cause of relaxation was explored.

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“…2a) and CdS/WO x (Fig. 2b) are the peaks corresponding to the hexagonal wurtzite α-CdS phase, otherwise known as greenockite (with peaks identified by black circles) 63–71 , cubic sphalerite β-CdS, or hawleyite (identified by grey circles) 66–71 , and monoclinic W 18 O 49 (marked by white circles) 72–74 , as indexed by JCPDS reference cards 41–1049, 10‐0454 and 71–2450, respectively. Due to overlaps between the diffractogram peaks of α-CdS and β-CdS, it is difficult to discern the relative composition of the two phases; the high relative intensity of the peak at 26.5°, however, implies that both phases were present in the samples.…”

Section: Resultsmentioning

confidence: 99%

Photocapacitive CdS/WOx nanostructures for solar energy storage

Jones

Phillips

Gannon

et al. 2019

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Through a facile solvothermal procedure, a CdS/WO x nanocomposite has been synthesised which exhibits photocapacitive behaviour under white light illumination at a radiant flux density of 99.3 mW cm −2 . Photoelectrochemical experiments were undertaken to examine the self-charging properties of the material and to develop an understanding of the underlying electronic band structure responsible for the phenomenon. By employing XPS, UPS and UV-Vis diffuse reflectance spectroscopy for further characterisation, the ability of the composite to generate current following the removal of incident light was related to the trapping of photoexcited electrons by the WO x component. The presence of WO x yielded an order of magnitude increase in the transient photocurrent response relative to CdS alone, an effect attributed to the suppression of electron-hole recombination in CdS due to hole transfer across the CdS/WO x interface. Moreover, current discharge from the material persisted for more than twenty minutes after final illumination, an order of magnitude improvement over many existing binary composites. As a seminal investigation into the photocapacitive characteristics of CdS/WO x composites, the work offers insight into how the constituent materials might be utilised as part of a future self-charging solar device.

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Facile method to prepare CdS nanostructure based on the CdTe films

Cited by 15 publications

References 40 publications

Catalyst- and template-free low-temperature in situ growth of n-type CdS nanowire on p-type CdTe film and p-n heterojunction properties

Catalyst- and template-free low-temperature in situ growth of n-type CdS nanowire on p-type CdTe film and p-n heterojunction properties

Dielectric and Conductivity Relaxation of rGO@CdS Nanocomposites via In Situ Assembly of CdS Nanoparticles on an rGO Layer

Photocapacitive CdS/WOx nanostructures for solar energy storage

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