Facile preparation and performance of novel high-T C xBi(Ni 1/2 Ti 1/2 )O 3 -(1-x)Pb(Zr 1/2 Ti 1/2 )O 3 piezoceramics

Composition design of PMN-PH-PT piezoelectric ceramics for high-temperature actuator applications

“…Room-temperature polarization-electric field (P-E) hysteresis loops, and bipolar and unipolar strain-electric field (S-E) hysteresis curves of the 0.15PMN-PH-PT ceramics are shown in figures 6 and 7, respectively, and the corresponding ferroelectric and piezoelectric properties are displayed in table 2. All the 0.15PMN-PH-PT ceramics show saturate P-E loops with slight asymmetry, which indicate that the ceramics are fully polarized, and the asymmetry can be attributed to the existence of point-defects induced space charge field due to the evaporation of some elements during sintering ( figure 6) [12]. The full polarization can be confirmed further by the impedance spectrum measurement, where the phase angle approaches 90° [27] accompanied by large electromechanical coupling coefficient K p for all the 0.15PMN-PH-PT ceramics.…”

“…However, the relative density of all the 0.15PMN-PH-PT ceramics exceeds 92%, especially the 0.15PMN-0.38PH-0.47PT ceramics, exhibiting the largest bulk density and relative density, being 8.53 g cm −3 and 97.76%, respectively. The high density provides effective guarantee for the 0.15PMN-PH-PT ceramics to obtain high resistivity, i.e., all exceeds 10 12 Ω·cm order, which can endure high electric-field poling to present excellent piezoelectricity (table 1).…”

“…High T C piezoelectric single crystals, some present excellent piezoelectricity but the T C is not high enough [10], and some have small piezoelectric constant (d 33 ) although possess high T C temperature, i.e., 6 pC N −1 and 1210°C of LiNbO 3 [11], whereas their crystal growth is all expensive and difficult, which restricts the applications in electronic and electrical devices. High T m ceramics such as BiScO 3 and Bi(Ni 1/2 Ti 1/2 )O 3 -based system, their preparation process is also difficult; furthermore, their leakage current is too large due to the evaporation of some elements during sintering, leading to polarization difficulty and limiting their applications [4,5,12].…”

Analogous Anti-Ferroelectricity in Y2O3-Coated (Pb0.92Sr0.05La0.02)(Zr0.7Sn0.25Ti0.05)O3 Ceramics and Their Energy-Storage Performance

“…In this work, Y 2 O 3 doped into PSLZSnT will produce donor point defects although the charge balance is taken into account in chemical formulation design, then Pb vacancies are engendered to compensate charge balance, i.e., Y2O3→PSLZSnT2YPb⋅+VPb″+Pb↑+3OO× considering cationic radii, expressed by the Kröger–Vink symbol system [29,30,31]. Such point defects are normally thermal-activated hopping-jumping charge carriers [31], tending to decrease resistivity of the sintered ceramics, especially at elevated temperatures. Resistivity of the 0.25 mol% Y 2 O 3 -doped PSLZSnT ceramics is 1.489 × 10 9 Ω⋅cm in this work, as shown in Figure 1, which should be increased further to obtain a large E b value required for high energy-storage density, in which heterovalent ion doping with self-charge-compensation combinations provides a promising strategy [32,33].…”

Energy harvesting, electrical, and magnetic properties of potassium bismuth titanate-based lead-free ceramics

“…The addition of BNiT decreases the T d , T F-R , P r and E c values and can improve the piezoelectric properties of the BNT-BT ceramics. Some previous work reported that PZT ceramics doped by BNiT possess good ferroelectric properties and high T c [29]. The 0.25BNiT-0.75PZT ceramic possesses high density and rather homogenous microstructure morphology accompanied by a uniform distribution of elements, especially Bi and Pb, even in grains and grain boundaries, which contribute greatly to their best electrical performances, i.e.…”