Facile preparation of SnO2/MoS2 nanocomposites with high electrochemical performance for energy storage applications

Muthulakshmi, G.; Ismail, M. Mohamed; Ramya, R.; Arivanandhan, M.; Arjunan, S.; Bhaskaran, A.

doi:10.1016/j.inoche.2022.109802

Cited by 15 publications

(4 citation statements)

References 45 publications

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“…Another important diffraction peak of (110) planes was found to appear around 59.14°, which showed a downshift by 0.80° from sample A to E. It was found that the out-of-plane lattice parameter ( c ) remained almost the same (∼12.69 Å), whereas the in-plane lattice parameter ( a ) slightly increased by 0.04 Å from sample A to E. Apart from these two peaks, other diffraction peaks of 2H-MoS 2 , coming from (100), (101), (102), and (006) planes, also appeared to form the broad line shape in between 30 and 50°. The full width at half maximum (FWHM) of the (002) peak was found to alter between the as-synthesized samples, resulting in the highest crystallite size for sample D (7.27 nm) with the lowest for sample A (3.94 nm) as calculated from the Scherrer equation and listed in Table S1 in the SI. After annealing, the (002) peak showed a slight downshift by 0.30°, while the (110) peak appeared at the same position (Figure S2 in the SI).…”

Section: Resultsmentioning

confidence: 99%

Study of Spin Localization and Charge Transport in Hydrothermally Synthesized 2H-MoS₂

Khamrui,

Bharti,

Banerjee

2023

J. Phys. Chem. C

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Hydrothermal synthesis of molybdenum disulfide (MoS2) with varying S/Mo precursor ratios results in nanoparticle formation with the 2H-crystallographic phase, alongside a significant content of molybdenum reduced oxide (MoO3–x ), as confirmed by Raman and X-ray photoelectron spectroscopy (XPS) measurements. Three distinct paramagnetic defect centers are identified by low-temperature electron paramagnetic resonance (EPR) measurements, with the spins localized around sulfur vacancy centers offering the strongest signal. Oxygen vacancies present in the MoO3–x offer the longest spin dephasing time (7.19 μs), whereas the spins localized in Mo-antisites show the fastest spin dephasing. Temperature-dependent resistivity measurements disclose a transition from three-dimensional variable range hopping (3D-VRH) to thermally activated transport (TAT), where the transition temperature (T tr) correlates with the MoO3–x content and the activation energy of TAT transport correlates to the sample morphology. Energy associated with the 3D-VRH transport, on the other hand, can be correlated with the degree of disorderedness of the samples. Annealing in an inert environment is found to improve the sample crystallinity and enhance the threshold energies of charge transport and homogeneity of the paramagnetic sites.

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Section: Resultsmentioning

confidence: 99%

Study of Spin Localization and Charge Transport in Hydrothermally Synthesized 2H-MoS₂

Khamrui,

Bharti,

Banerjee

2023

J. Phys. Chem. C

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“…The optical properties of MoS 2 -SnO 2 nanocomposite are inherited from MoS 2 , and its capability to absorb visible light is significantly increased. Because of the quantum confinement property of MoS 2 nanoparticles in the synthesized nanocomposites, the generated composite bandgap energy rises with increasing MoS 2 concentration [43]. This phenomenon may further be related to a reduction in crystallite size.…”

Section: Uv-visible Spectroscopymentioning

confidence: 92%

Flexible SnO₂–MoS₂ based memristive device exhibiting stable and enhanced memory phenomenon

Komal,

Singh,

Singh

2023

J. Phys. D: Appl. Phys.

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Flexible non-volatile memory devices have been gaining interest in expanding the digital data storage world. Due to the burgeoning advancement in the healthcare industry, the Internet of Things, and wearable electronics, the demand for ultra-thin, low-power, and flexible memory is increasing. Further, the advancement of synthesis procedures for two-dimensional nanomaterials having better optical, electrical, and mechanical strength with flexibility has fuelled the flexible memory device area, as commonly used flash memory is approaching its physical limit. In this context, the present work reports the flexible resistive switching memory device based on pure molybdenum disulfide (MoS2) and tin oxide (SnO2) based nanocomposite powder synthesized using the simple hydrothermal process. The nanocomposite formation was characterized using x-ray diffraction and Raman spectroscopic techniques. The memory device was fabricated by spin-coating the pure MoS2, pure SnO2, and MoS2–SnO2 nanocomposite film over the ITO-PET flexible substrate. The device was completed by thermally evaporating the thin Al layer through a shadow mask. It was found that MoS2–SnO2 based memory devices exhibited improved switching performance having a higher I ON/I OFF ratio, and lower switching voltage in comparison to pure MoS2 and pure SnO2-based devices (I ON/I OFF ratio ∼100, V = 0.5 V). Furthermore, to check the stability and cyclic performance of the fabricated device, the retention and endurance test was also performed, and the MoS2–SnO2 device retained the HRS and LRS states up to 2 × 103s and showed stable performance up to 100 switching cycles without much degradation, respectively. It should be mentioned that the presently proposed ReRAM device based on SnO2 and MoS2 with flexible and low-power features had excellent potential for use in the wearable device industry.

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“…[18] Muthulakshmi et al have reported SnO 2 / MoS 2 which delivered C sp 146 F g À1 at 1 A g À1 . [19] Nevertheless, the low utilization of the interlaminar reaction sites, aggregation, and restacking phenomenon of the conjugated layers exhibited by transition-metal sulfides limit their performance in ultra-capacitor and avoid their commercialization. [20,21] To overcome the aforementioned challenges and resolution, current research mainly focuses on hybrid electrodes that incorporate MoS 2 with carbon nanotubes, nanorods, nanoparticles, carbon nanofibers, etc., could prevent aggregation and restacking and enhance the electrical conductivity.…”

Section: Introductionmentioning

confidence: 99%

“…[ 18 ] Muthulakshmi et al have reported SnO 2 /MoS 2 which delivered C sp 146 F g −1 at 1 A g −1 . [ 19 ]…”

Section: Introductionmentioning

confidence: 99%

Microwave‐Induced Rapid Synthesis of MoS₂@Cellulose Composites as an Efficient Electrode Material for Quasi‐Solid‐State Supercapacitor Application

2023

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Transition‐metal dichalcogenides (TMDs) are highly desired for energy‐storage devices due to their intrinsic layered structure, huge surface area, and the large number of active sites. However, the TMDs fail to reach their potential due to restacking of 2D layered structures that remains a major technological hurdle. Herein, MoS2 nanosheets and cellulose fiber binary composite (MoS2@Cellulose) prepared by the microwave‐assisted technique are demonstrated as an electrode material for supercapacitor application. The prepared material are tested in symmetric and asymmetric all solid‐state device assemblies. It is found that the quasi‐solid‐state symmetric and quasi‐solid‐state asymmetric supercapacitors exhibited remarkably higher specific capacitance of ≈294 and ≈177 F g−1 at a current density of 1 A g−1, respectively, than their counterpart. Furthermore, the symmetric and asymmetric devices deliver excellent energy densities of ≈40.84 and ≈42.67 Wh kg−1 while maintaining the power density of 400 and 791.81 W kg−1, respectively, and outstanding cyclic stability. The cellulose entanglement causes a reduction in the aggregation and restacking of MoS2, which may improve the electrochemical performance of the supercapacitor. Herein this research, a pathway is provided to create an efficient energy‐storage system using 2D materials with sustainable cellulose.

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Facile preparation of SnO2/MoS2 nanocomposites with high electrochemical performance for energy storage applications

Cited by 15 publications

References 45 publications

Study of Spin Localization and Charge Transport in Hydrothermally Synthesized 2H-MoS₂

Study of Spin Localization and Charge Transport in Hydrothermally Synthesized 2H-MoS₂

Flexible SnO₂–MoS₂ based memristive device exhibiting stable and enhanced memory phenomenon

Microwave‐Induced Rapid Synthesis of MoS₂@Cellulose Composites as an Efficient Electrode Material for Quasi‐Solid‐State Supercapacitor Application

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Facile preparation of SnO2/MoS2 nanocomposites with high electrochemical performance for energy storage applications

Cited by 15 publications

References 45 publications

Study of Spin Localization and Charge Transport in Hydrothermally Synthesized 2H-MoS2

Study of Spin Localization and Charge Transport in Hydrothermally Synthesized 2H-MoS2

Flexible SnO2–MoS2 based memristive device exhibiting stable and enhanced memory phenomenon

Microwave‐Induced Rapid Synthesis of MoS2@Cellulose Composites as an Efficient Electrode Material for Quasi‐Solid‐State Supercapacitor Application

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Study of Spin Localization and Charge Transport in Hydrothermally Synthesized 2H-MoS₂

Study of Spin Localization and Charge Transport in Hydrothermally Synthesized 2H-MoS₂

Flexible SnO₂–MoS₂ based memristive device exhibiting stable and enhanced memory phenomenon

Microwave‐Induced Rapid Synthesis of MoS₂@Cellulose Composites as an Efficient Electrode Material for Quasi‐Solid‐State Supercapacitor Application