2022
DOI: 10.1002/ente.202200809
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Facile Sulfuration Route to Enhance the Supercapacitor Performance of 3D Petal‐like NiV‐Layered Double Hydroxide

Abstract: The charge conductivity properties and ionic delivery of pseudocapacitive materials are important factors for the charge storage process. Herein, the new petal-like S-NiVlayered double hydroxide (LDH) materials are successfully synthesized by a presynthetic solvothermal reaction and a sulfidation modification procedure. The specific capacitance of the new petal-like S-NiV-LDHs electrode reaches 1403 F g À1 when the current density is 1 A g À1 , and this is attributed to Ni 3 S 2 formed on the surface of NiV-LD… Show more

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Cited by 11 publications
(6 citation statements)
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“…The planes at (110), (009), (006), and (003) of the NiV-LDHs (NiV-LDHs PDF#052-1627) correspond to characteristic diffraction peaks at 60.19°, 34.52°, 23.47°, and 11.59°, respectively. 30 Interestingly, the (110), ( 009), (006), and (003) feature planes of NiV-LDHs can be attributed to the peaks of NiV-LDHs/GDY at 60.32°, 34.48°, 23.30°, and 11.69°, which further indicates that the basic framework of NiV-LDHs has not changed. In addition, the XRD peaks of NiV-LDHs/GDY did not show an orderly negative shift after recombination, which was caused by the small amount of GDY introduced.…”
Section: Resultsmentioning
confidence: 88%
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“…The planes at (110), (009), (006), and (003) of the NiV-LDHs (NiV-LDHs PDF#052-1627) correspond to characteristic diffraction peaks at 60.19°, 34.52°, 23.47°, and 11.59°, respectively. 30 Interestingly, the (110), ( 009), (006), and (003) feature planes of NiV-LDHs can be attributed to the peaks of NiV-LDHs/GDY at 60.32°, 34.48°, 23.30°, and 11.69°, which further indicates that the basic framework of NiV-LDHs has not changed. In addition, the XRD peaks of NiV-LDHs/GDY did not show an orderly negative shift after recombination, which was caused by the small amount of GDY introduced.…”
Section: Resultsmentioning
confidence: 88%
“…The correct and reasonable crystal patterns of GDY nanosheets, nanoflower NiV-LDHs, and nanoflower NiV-LDHs/GDY were analyzed and clarified. The planes at (110), (009), (006), and (003) of the NiV-LDHs (NiV-LDHs PDF#052-1627) correspond to characteristic diffraction peaks at 60.19°, 34.52°, 23.47°, and 11.59°, respectively . Interestingly, the (110), (009), (006), and (003) feature planes of NiV-LDHs can be attributed to the peaks of NiV-LDHs/GDY at 60.32°, 34.48°, 23.30°, and 11.69°, which further indicates that the basic framework of NiV-LDHs has not changed.…”
Section: Results and Discussionmentioning
confidence: 98%
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“…The mass-specific capacitance retention rates of P-NiV-LDHs-8//AC asymmetric supercapacitor (ASC) and Se-NiV-LDHs-1//AC ASC are 84.62% and 78.95%, respectively. Compared with previous work on the surface vulcanization modification of NiV-LDHs, 21 the microstructure of NiV-LDHs was slightly modified by phosphating and selenization. At the same time, the overall electrochemical performance of NiV-LDHs was improved.…”
Section: Introductionmentioning
confidence: 86%
“…19 Among transition-metal compounds, Ni 3 S 2 , NiSe 2 , and Ni 2 P materials have attracted much attention from scholars due to their advantages, such as more exposed active sites and more abundant oxidation valence states. 20 Based on previous work, 21 the electrode materials were surface-modified based on the abundant mesoporous microstructure of LDHs, so that the surface of LDHs could be exposed to more electrochemical active sites and have better energy storage, better stability, and more negligible electrochemical impedance to improve the electrochemical performance of the preparation of electrode materials.…”
Section: Introductionmentioning
confidence: 99%