The
copper nanowire (Cu NW) network is considered a promising alternative
to indium tin oxide as transparent conductors for advanced optoelectronic
devices. However, the fast degradation of copper in ambient conditions
largely overshadows its practical applications. Here we demonstrate
a facile method for epitaxial growth of hexagonal boron nitride (h-BN)
of a few atomic layers on interlaced Cu NWs by low-pressure chemical
vapor deposition, which exhibit excellent thermal and chemical stability
under high temperature (900 °C in vacuum), high humidity (95%
RH), and strong base/oxidizer solution (NaOH/H2O2). Meanwhile, their optical and electrical performances remain similar
to those of the original Cu NWs (e.g., high optical transmittance (∼93%) and high conductivity
(60.9 Ω/□)). A smart privacy glass is successfully fabricated
based on a Cu@h-BN NW network and liquid crytal, which could rapidly
control the visibility from transparent to opaque (0.26 s) and, at
the same time, strongly block the mid-infrared light for energy saving
by screening radiative heat. This precise engineering of epitaxial
Cu@h-BN core–shell nanostructure offers broad applications
in high-performance electronic and optoelectronic devices.