2012
DOI: 10.1016/j.materresbull.2012.07.002
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Facile synthesis of self-assembled SnO nano-square sheets and hydrogen absorption characteristics

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Cited by 45 publications
(14 citation statements)
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“…These binding energies of Sn 3d 5/2 are higher than that reported for Sn 2+ (486.4-486.5 eV) and slightly lower than that reported for Sn 4+ (487.2-487.5 eV) [23]. It can thus be hypothesized that both samples might contain tin in both II and IV oxidation states, and the lower Sn 3d 5/2 binding energy of Sn-2 implies larger amount of Sn 2+ in SnO 2−x sample [24,25]. The asymmetric peak was observed in the O-1s region (in figure 3(c)), which can be deconvoluted into two components at binding energies of 530.45 and 532.18 eV for sample Sn-1, and 530.88, 531.74 and 533.67 eV for sample Sn-2, as displayed in figure 2(d) and table 1.…”
Section: Resultsmentioning
confidence: 60%
“…These binding energies of Sn 3d 5/2 are higher than that reported for Sn 2+ (486.4-486.5 eV) and slightly lower than that reported for Sn 4+ (487.2-487.5 eV) [23]. It can thus be hypothesized that both samples might contain tin in both II and IV oxidation states, and the lower Sn 3d 5/2 binding energy of Sn-2 implies larger amount of Sn 2+ in SnO 2−x sample [24,25]. The asymmetric peak was observed in the O-1s region (in figure 3(c)), which can be deconvoluted into two components at binding energies of 530.45 and 532.18 eV for sample Sn-1, and 530.88, 531.74 and 533.67 eV for sample Sn-2, as displayed in figure 2(d) and table 1.…”
Section: Resultsmentioning
confidence: 60%
“…And hydrothermal reaction time and temperature play an important role for the formation of morphology. In the study of our group's previous similar work, we have reported that the micro‐square structures can be crack and tilt to form nanostructures with increasing the hydrothermal reaction time. Based on the above structural analysis and our previous work, a possible growth mechanism for the self‐assembling nanoflakes‐based crossed SnO architecture is proposed, as illustrated in figure .…”
Section: Resultsmentioning
confidence: 93%
“…As a p‐type semiconductor with wide optical band gap of 2.5 to 3.4 eV, SnO has attracted considerable interest for the applications as anode material, thin film transistor TFT, chemical sensor, hydrogen absorption materials and a precursor for the production of SnO 2 .…”
Section: Introductionmentioning
confidence: 99%
“…Many chemical and physical methods have been used to prepare tin oxide micro and nanostructures such as thermal decomposition, thermal chemical vapour deposition (CVD), solvothermal, RF sputtering, the hydrothermal method, the sol–gel method and surfactant assisted methods [1, 2]. Among the chemical methods, the solvothermal approach has more advantages compared with above‐mentioned methods in several aspects, such as simple manipulation, low reaction temperature, short processing time and less complicated equipment being involved [3].…”
Section: Introductionmentioning
confidence: 99%