Facile synthesis of β-Ga2O3 based high-performance electronic devices via direct oxidation of solution-processed transition metal dichalcogenides
Denice Navat Feria,
Qi-Zhi Huang,
Chun-Shao Yeh
et al.
Abstract:Gallium oxide (Ga2O3) is a promising wide bandgap semiconductor that is viewed as a contender for the next generation of high-power electronics due to its high theoretical breakdown electric field and large Baliga's figure of merit. Here, we report a facile route of synthesizing β-Ga2O3 via direct oxidation conversion using solution-processed two-dimensional (2D) GaS semiconducting nanomaterial. Higher order of crystallinity in X-ray diffraction (XRD) patterns and full surface coverage formation in scanning el… Show more
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