Factors affecting the graphitization behavior of the powder source during seeded sublimation growth of SiC bulk crystal

Li, Heqing; Chen, X.L; Ni, D.Q.; Wu, Xinming

doi:10.1016/s0022-0248(03)01492-1

Cited by 29 publications

(16 citation statements)

References 10 publications

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“…From the above reactions, one notes that the SiC 2 vapor is formed from reactions (2) and (4), and the Si vapor from reactions (1) and (2). The relations between the equilibrium partial pressures and the temperature of Si, SiC 2 , and Si 2 C gases in the SiC + C system are as follows 12 : …”

Section: Resultsmentioning

confidence: 99%

Faster Growth of 6H-SiC Single Crystals by a Physical Vapor Transport Technique with Two Crucibles

Cheng

Gao

Liu

et al. 2007

Journal of Elec Materi

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For fast growth of 6H-SiC single crystals, a physical vapor transport (PVT) technique with two crucibles is proposed herein. By providing the growth chamber with a small continuous flux of Si vapor, the growth rate is enhanced by three times over the conventional PVT technique. The utilization ratio of the raw material is also improved. Energy dispersive analysis of X-rays (EDAX) shows that the Si content of the grown crystal is the same as that of the seed crystal. Scanning electron microscopy (SEM) indicates that, compared with conventional techniques, fewer micropipes are created in crystals grown by the technique using two crucibles.

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Section: Resultsmentioning

confidence: 99%

Faster Growth of 6H-SiC Single Crystals by a Physical Vapor Transport Technique with Two Crucibles

Cheng

Gao

Liu

et al. 2007

Journal of Elec Materi

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“…Usually, tens of defects could be found in the last grown wafer. In PVT growth of SiC, the charge sublimates and dissociates into different forms of Si-and C-containing molecules [22]. As high-purity graphite crucible (99.9995 %) is porous, Si species is quite easy to escape during the growth due to its smallest molecular volume, which usually results in a carbon-rich vapor in the late growth.…”

Section: Evaluation Of the New Type Of Defect By The Statistical Apprmentioning

confidence: 99%

Characterizations and formation mechanism of a new type of defect related to nitrogen doping in SiC crystals

et al. 2014

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Here, we report a commonly occurring defect related to nitrogen doping in silicon carbide crystals grown by physical vapor transport method while its formation mechanism has remained unclear. It is often mislabeled as planar hexagonal void defect (PHVD) owing to their similar in shape and size on wafer surface. Our results indicate that this is a new type of defect and differs from PHVD with respect to their nitrogen concentrations, void shapes and the connections to micropipe. We found that the carbon-rich vapor during the crystal growth is responsible for the formation of this type of defect. A possible three-stage defect developing mechanism and measures to avoid the defects are proposed.

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“…Graphitization of the powder source can cause uncontrolled formation of polytypes, dislocations and micropipes [26]. To manifest the graphitization extent of the powder source, the difference (J Si -J C ) of the Si flux and the C flux on the source face can be used.…”

Section: Graphitization On the Powder Sourcementioning

confidence: 99%

Analysis of SiC crystal sublimation growth by fully coupled compressible multi-phase flow simulation

Gao

Chen

Nakano

et al. 2010

Journal of Crystal Growth

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Factors affecting the graphitization behavior of the powder source during seeded sublimation growth of SiC bulk crystal

Cited by 29 publications

References 10 publications

Faster Growth of 6H-SiC Single Crystals by a Physical Vapor Transport Technique with Two Crucibles

Faster Growth of 6H-SiC Single Crystals by a Physical Vapor Transport Technique with Two Crucibles

Characterizations and formation mechanism of a new type of defect related to nitrogen doping in SiC crystals

Analysis of SiC crystal sublimation growth by fully coupled compressible multi-phase flow simulation

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