Factors influencing doping control and abrupt metallurgical transitions during atmospheric pressure MOVPE growth of AlGaAs and GaAs

Controlled formation of GaAs pn junctions during hydride vapor phase epitaxy of GaAs

“…Our best doping transitions have occurred over $16 nm. Other growth systems, including MOVPE, operating at similar growth velocities should have transition widths of the same magnitude [3]. Typically the growth rates are slower in MOVPE allowing for the formation of more abrupt doping profiles.…”

“…MOVPE is generally carried out under conditions in which the growth is mass transport limited. The ability to form sharp interfaces is therefore limited by the specific gas flow dynamics and the speed with which gases can be switched and purged from the reactor [2][3]. The design of the reactor and the employed growth conditions therefore can determine the properties of the resulting materials structures.…”

Quantum cascade lasers grown by metalorganic vapor phase epitaxy

“…The response time of our atmospheric pressure MOVPE reactor is expected to be ϳ1 s, 5 and consequently the Al 0.45 Ga 0.55 As barriers should be completely resolved within ϳ2 monolayers ͑ML͒. However, in practice it can be difficult to achieve such abrupt changes in composition due to alkyl adsorption/desorption effects within the critical stainless steel pipework of the reactor's gas handling sections.…”

Observation of persistent negative photoconductivity effect in AlGaAs/GaAs modulation-doped structures

“…1 and Table I) were grown at 700°C using atmospheric pressure metal organic vapor phase epitaxy (MOVPE). The MOVPE equipment has been described elsewhere [10]. We have used adduct purified trimethylaluminum (TMA1) and trimethylgallium (TMGa) to eliminate such impurities as alkoxides which can seriously degrade large Al mole fraction alloys.…”