Factors influencing the κ-Al2O3 → α-Al2O3 phase transformation during CVD growth

Fredriksson, Eva; Carlsson, Jan‐Otto

doi:10.1016/0257-8972(93)90022-g

Cited by 26 publications

(8 citation statements)

References 37 publications

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“…For example, Choi et al [6] obtained amorphous film at 850 1C with AlCl 3 /CO 2 /H 2 system, and a-phase was formed only above 1000 1C. We did not detect k-Al 2 O 3 in our films although in some report using AlCl 3 /CO 2 /H 2 system, k to a transformation has been observed [15]. The amount of chlorine in the film was evaluated using EDAX-ZAF (Z=atomic number, A=absorption, F=fluorescence) algorithm.…”

Section: Film Propertiescontrasting

confidence: 63%

Atmospheric pressure chemical vapor deposition mechanism of Al2O3 film from AlCl3 and O2

Nasution

Velasco

Kim

2009

Journal of Crystal Growth

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Section: Film Propertiescontrasting

confidence: 63%

Atmospheric pressure chemical vapor deposition mechanism of Al2O3 film from AlCl3 and O2

Nasution

Velasco

Kim

2009

Journal of Crystal Growth

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“…It has been employed in a variety of chemical vapor deposition (CVD) processes to Al 2 O 3 , [21][22][23][24] AlN, 25,26 and Al metal; 27 and it is also ubiquitous in the ALD a) Electronic mail: s.e.potts@tue.nl b)…”

Section: Precursor Considerations and Propertiesmentioning

confidence: 99%

Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor

Potts

Dingemans

Lachaud

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The authors have been investigating the use of [Al(CH3)2(μ-OiPr)]2 (DMAI) as an alternative Al precursor to [Al(CH3)3] (TMA) for remote plasma-enhanced and thermal ALD over wide temperature ranges of 25–400 and 100–400 °C, respectively. The growth per cycle (GPC) obtained using in situ spectroscopic ellipsometry for plasma-enhanced ALD was 0.7–0.9 Å/cycle, generally lower than the >0.9 Å/cycle afforded by TMA. In contrast, the thermal process gave a higher GPC than TMA above 250 °C, but below this temperature, the GPC decreased rapidly with decreasing temperature. Quadrupole mass spectrometry data confirmed that both CH4 and HOiPr were formed during the DMAI dose for both the plasma-enhanced and thermal processes. CH4 and HOiPr were also formed during the H2O dose but combustion-like products (CO2 and H2O) were observed during the O2 plasma dose. Rutherford backscattering spectrometry showed that, for temperatures >100 °C and >200 °C for plasma-enhanced and thermal ALD, respectively, films from DMAI had an O/Al ratio of 1.5–1.6, a H content of ∼5 at. % and mass densities of 2.7–3.0 g cm−3. The film compositions afforded from DMAI were comparable to those from TMA at deposition temperatures ≥150 °C. At lower temperatures, there were differences in O, H, and C incorporation. 30 nm thick Al2O3 films from the plasma-enhanced ALD of DMAI were found to passivate n- and p-type Si floatzone wafers (∼3.5 and ∼2 Ω cm, respectively) with effective carrier lifetimes comparable to those obtained using TMA. Surface recombination velocities of < 3 and < 6 cm s−1 were obtained for the n- and p-type Si, respectively. Using these results, the film properties obtained using DMAI and TMA are compared and the mechanisms for the plasma-enhanced and thermal ALD using DMAI are discussed.

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“…The growth of a-Al 2 O 3 is often initiated by the K-® a-Al 2 O 3 transformation during the deposition process, [8,42] and K-Al 2 O 3 is the phase grown initially irrespective of the CVD process temperature. An increase in the deposition time leads to increased a to K ratio.…”

Section: Deposit Stoichiometry and Morphologymentioning

confidence: 99%

Co-deposition of Silica, Alumina, and Aluminosilicates from Mixtures of CH3SiCl3, AlCl3, CO2, and H2. Thermodynamic Analysis and Experimental Kinetics Investigation

Nitodas

Sotirchos

1999

Chem. Vap. Deposition

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The co-deposition of silica, alumina, and aluminosilicates from mixtures of methyltrichlorosilane, aluminum trichloride, carbon dioxide, and hydrogen was investigated in this study. In order to elucidate some aspects of the co-deposition process, the deposition of pure silica and pure alumina from mixtures of methyltrichlorosilane and aluminum trichloride, respectively, with CO 2 and H 2 was also investigated. Kinetic data were obtained by carrying out CVD experiments on SiC substrates in a hot-wall reactor of tubular geometry, which permitted continuous monitoring of the deposition rate through the use of a microbalance. Reaction rate data are presented for temperatures between 1073 and 1373 K (800±1100 C) at 13.3 kPa (100 torr) pressure for various feed compositions and various positions along the axis of the deposition reactor. Thermodynamic equilibrium computations were performed on the Al/Si/Cl/C/O/H, Al/Cl/C/O/H, and Si/Cl/C/O/H systems at the conditions used in the deposition experiments. The experimental observations are discussed in the context of the results of the equilibrium analysis and of past studies. Among the most interesting findings of this study is that the presence of AlCl 3 has a catalytic effect on the incorporation of silica in the deposit, leading to co-deposition rates that are a factor of 2±3 higher than the deposition rates that are obtained when only one of the two chlorides (CH 3 SiCl 3 or AlCl 3 ) is present in the feed.

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Factors influencing the κ-Al2O3 → α-Al2O3 phase transformation during CVD growth

Cited by 26 publications

References 37 publications

Atmospheric pressure chemical vapor deposition mechanism of Al2O3 film from AlCl3 and O2

Atmospheric pressure chemical vapor deposition mechanism of Al2O3 film from AlCl3 and O2

Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor

Co-deposition of Silica, Alumina, and Aluminosilicates from Mixtures of CH3SiCl3, AlCl3, CO2, and H2. Thermodynamic Analysis and Experimental Kinetics Investigation

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