Failure Analysis on Power Trench MOSFET Devices with Copper Wire Bonds

Abstract

With gold prices steadily going up in recent years, copper wire has gained popularity as a means to reduce cost of manufacturing microelectronic components. Performance tradeoff aside, there is an urgent need to thoroughly study the new technology to allay any fear of reliability compromise. Evaluation and optimization of copper wire bonding process is critical. In this paper, novel failure analysis and analytical techniques are applied to the evaluation of copper wire bonding process. Several FA/analytical techniques and FA procedures will be discussed in detail, including novel laser/chemical/plasma decapsulation, FIB, wet chemical etching, reactive ion etching (RIE), cross-section, CSAM, SEM, EDS, and a combination of these techniques. Two case studies will be given to demonstrate the use of these techniques in copper wire bonded devices.

Laser Focus Depth Adaptation for Decapsulation of Copper Wirebonded Devices

“…Some of these are related to the chemical etching temperature, mixed acid ratios and concentration, etc. [1][2][3][4][5][6][7].…”