Failure mechanisms in encapsulated copper wire-bonded devices

Manoharan, Subramani; KrishnanRamaswami, Gopal; McCluskey, F. Patrick; Pecht, Michael

doi:10.1109/ipfa.2016.7564308

Cited by 14 publications

(3 citation statements)

References 10 publications

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“…The hook moves up and the wire is pulled. The force at which the wire breaks of lifted off from its pad is measured to be the pull strength [16]. The schematic diagram of the wire pull test is shown in Figure 6.…”

Section: Methodsmentioning

confidence: 99%

Bond strength evaluation of heat treated Cu-Al wire bonding

Shariza

Anand

Warikh

et al. 2018

JMES

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Bond strength evaluation of wire bonding in microchips is the key study in any wire bonding mechanism. The quality of the wire bond interconnection relates very closely to the reliability of the microchip during performance of its function in any application. In many reports, concerns regarding the reliability of the microchip are raised due to formation of void at the wire-bond pad bonding interface, predominantly after high temperature storage (HTS) annealing conditions. In this report, the quality of wire bonds prepared at different conditions, specifically annealed at different HTS durations are determined by measurements of the strength of the interface between the bond wire and the bond pad. The samples are tested in pull test and bond shear test. It was observed that the higher bonding temperature as well as the longer duration of HTS increased the bond strength. This is represented through the analysis of the measurements of ball shear strength. This is due to the fact that higher bonding temperature and longer HTS promoted better growth of the Cu-Al IMC layer. A transmission electron microscopy - energy dispersive X-ray analysis (TEM-EDX) has been carried out to observe the formation of the Cu-Al IMC layer in the sample.

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Section: Methodsmentioning

confidence: 99%

Bond strength evaluation of heat treated Cu-Al wire bonding

Shariza

Anand

Warikh

et al. 2018

JMES

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“…IC packaging fills the gap between production of semiconductors and implementing the finished product [1]- [3]. Wire bonding, often referred to as sequential bonding, is a common connecting technique for packages that uses metallic wires to link IC chips and substrates [4]- [6]. To be more exact, local heat produced by ultrasonic vibrations is used to establish these first-level junctions using Cu or Au wires that span between the substrate pads and die.…”

Section: Introductionmentioning

confidence: 99%

Study Of Decapsulation On IC With Temperature And Volume H2SO4 Variation

Budiana,

Aryeni,

Maulidiah

et al. 2024

Proceedings of the 6th International Conference on Applied Engineering, ICAE 2023, 7 November 2023, Batam, Riau Islands, Indone

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Decapsulation is the process of opening the polymer layer covering the die. The purpose of decapsulation on IC is to facilitate checks on the quality of the die. The method carried out in this study uses the method of dripping H2SO4 on the IC surface. The variables to be examined in this study are variations in the use of H2SO4 volume and H2SO4 temperature. The volume variation used consists of 0.1130 ml (10 drops), 0.1356 ml (12 drops) and 0.1582 ml (14 drops). While the temperature variation used in this study consisted of 165 °C, 170 °C and 175 °C. The results showed that all samples is not completed decapsulation process. Some samples (B, C, E, F, H, and I) is partial decapsulation while other sample is not open die at all. Moreover, Sample C exhibits the greatest thickness reduction among all the samples under examination, and the die is distinctly visible.

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“…The choice of copper as a wire material, rather than gold, offers a number of benefits due to its material properties. These benefits include improved thermal and electrical properties, excellent ball neck strength, high loop stability, superior loop control, and reduced cost [4][5][6][7][8]. However, the material properties of copper with its higher yield strength than gold can result in higher stress and strain in the package and structure, or can lead to localized stress intensities.…”

Section: Introductionmentioning

confidence: 99%

Bond Wire Fatigue of Au, Cu, and PCC in Power LED Packages

Czerny,

Schuh

2023

Micromachines

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Bond wire failure, primarily wire neck breakage, in power LED devices due to thermomechanical fatigue is one of the main reliability issues in power LED devices. Currently, the standard testing methods to evaluate the device’s lifetime involve time-consuming thermal cycling or thermal shock tests. While numerical or simulation methods are used as convenient and quick alternatives, obtaining data from material lifetime models with accurate reliability and without experimental fatigue has proven challenging. To address this issue, a mechanical fatigue testing system was developed with the purpose of inducing mechanical stresses in the critical region of the bond wire connection above the ball bond. The aim was to accelerate fatigue cracks at this bottleneck, inducing a similar failure mode as observed during thermal tests. Experimental investigations were conducted on Au, Cu, and Pd-coated Cu bonding wires, each with a diameter of 25 µm, using both low- and high-frequency excitation. The lifetime of the wire bond obtained from these tests ranged from 100 to 1,000,000 cycles. This proposed testing method offers material lifetime data in a significantly shorter timeframe and requires minimal sample preparation. Additionally, finite element simulations were performed to quantify the stresses at the wire neck, facilitating comparisons to conventional testing methods, fatigue test results under various operating conditions, material models, and design evaluations of the fine wire bond reliability in LED and microelectronic packages.

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Failure mechanisms in encapsulated copper wire-bonded devices

Cited by 14 publications

References 10 publications

Bond strength evaluation of heat treated Cu-Al wire bonding

Bond strength evaluation of heat treated Cu-Al wire bonding

Study Of Decapsulation On IC With Temperature And Volume H2SO4 Variation

Bond Wire Fatigue of Au, Cu, and PCC in Power LED Packages

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