Fano effect in resonant Raman spectrum of CdTe

Medel‐Ruíz, C.I.; Guevara, Héctor Pérez Ladrón de; Molina-Contreras, J.R.; Frausto-Reyes, Claudio

doi:10.1016/j.ssc.2020.113895

Cited by 18 publications

(8 citation statements)

References 20 publications

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“…Fano asymmetric lineshapes have been observed in semiconductor materials such as silicon, 28−30 graphene, 31 diamond, 32,33 and CdTe. 34 On one hand, the incident photons are scattered by phonons to form a discrete energy state, and on the other hand, they are scattered by electrons to generate a continuous energy state. The coupling makes the Raman peak exhibit an asymmetric Breit Wigner Fano lineshape, which can be described as follows 24,34…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…On one hand, the incident photons are scattered by phonons to form a discrete energy state, and on the other hand, they are scattered by electrons to generate a continuous energy state. The coupling makes the Raman peak exhibit an asymmetric Breit Wigner Fano lineshape, which can be described as follows , I ( ω ) = I 0 [ q + 2 false( ω − ω 0 false) / Γ ] 2 1 + false[ 2 ( ω − ω 0 ) / normalΓ false] 2 where q is the asymmetry parameter. ω 0 and Γ are the frequency (peak position) and the linewidth of phonons, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…The asymmetric shape of LO originates from the Fano resonance, which describes the asymmetric lineshape generated by coupling interference between discrete and continuous states’ scattering amplitudes in the system. − Generally, for semiconductor materials, the Fano resonance mainly occurs in the resonance Raman scattering of undoped materials or in the general Raman scattering of doped materials, which is closely related to charge carriers (electrons). Fano asymmetric lineshapes have been observed in semiconductor materials such as silicon, − graphene, diamond, , and CdTe . On one hand, the incident photons are scattered by phonons to form a discrete energy state, and on the other hand, they are scattered by electrons to generate a continuous energy state.…”

Section: Resultsmentioning

confidence: 99%

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Electron–Phonon Fano Effect in Cubic Boron Nitride

Zhu,

Hu,

Lin

et al. 2023

ACS Photonics

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The phonon properties of cubic boron nitride (cBN) with ultrahigh thermal conductivity have always been of great concern. Generally, due to the anharmonic effect, phonons undergo monotonic decay with increasing temperature. However, anomalous nonmonotonic phonon decay of longitudinal optical phonons (LO) is observed in cBN single crystals with low resistivity grown through the high-temperature and high-pressure catalytic method. Specifically, the temperature evolution of the Raman phonon properties of cBN single crystals in the range 100− 520 K has been studied. As temperature increases, the linewidth of LO first decreases and then increases, and the Raman intensity first increases and then decreases with a transition temperature. The nonmonotonic phonon decay is caused by both the electron− phonon Fano effect and the phonon−phonon anharmonic effect. At low temperatures, phonons are bound by electrons, and phonon decay is mainly dominated by the Fano effect. As the temperature increases, the Fano effect weakens, while the anharmonic effect gradually strengthens, leading to the appearance of a transition temperature. The results reveal the electron−phonon interaction in cBN, which will deepen the understanding of the phonon behavior in cBN.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Electron–Phonon Fano Effect in Cubic Boron Nitride

Zhu,

Hu,

Lin

et al. 2023

ACS Photonics

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“…EPI also affects the phononic behaviour of semiconductors which are studied by analyzing Raman spectra [18]. In a 2D material, Raman selection rule relaxes due to quantum confinement effect, where not only phonons at the zone centre but also the nearby phonons (k > 0) contribute to scattering, thus leading to an asymmetric broadening of the Raman profile [18,24]. Along with the quantum confinement effect, the Fano resonance effect also affects the symmetry of the semiconductors' Raman profile [25].…”

Section: Introductionmentioning

confidence: 99%

Tuning the electron–phonon interaction via exploring the interrelation between Urbach energy and fano-type asymmetric raman line shape in GO-hBN nanocomposites

Yadav,

Mohanty

2023

Nanotechnology

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Hexagonal boron nitride (hBN), having an in-plane hexagonal structure in the sp2 arrangement of atoms, proclaims structural similarity with graphene with only a small lattice mismatch. Despite having nearly identical atomic arrangements and exhibiting almost identical properties, the electronic structures of the two materials are fundamentally different. Considering the aforementioned condition, a new hybrid material with enhanced properties can be evolved by combining both materials. This experiment involves liquid phase exfoliation of hBN and two-dimensional nanocomposites of GO-hBN with varying hBN and graphene oxide (GO) ratios. The optical and vibrational studies conducted using UV–vis absorption and Raman spectroscopic analysis report the tuning of electron–phonon interaction (EPI) in the GO-hBN nanocomposite as a function of GO content (%). This interaction depends on disorder-induced electronic and vibrational modifications addressed by Urbach energy (E u ) and asymmetry parameter (q), respectively. The EPI contribution to the induced disorders estimated from UV–vis absorption spectra is represented as EPI strength (E e–p ) and its impact observed in Raman phonon modes is quantified as an asymmetry parameter (q). The inverse of the asymmetry parameter is related to E e–p , as E e–p ∼ 1/|q|. Here in this article, a linear relationship has been established between E u and the proportional parameter (k), where k is determined as the ratio of the intensity of specific Raman mode (I) and q 2, explaining the disorders’ effect on Raman line shape. Thus a correlation between Urbach energy and the asymmetry parameter of Raman mode confirms the tuning of EPI with GO content (%) in GO-hBN nanocomposite.

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“…RS as well as HRS under excitation near resonance with electronic transitions permit one to obtain information on electronic states and scattering mechanisms. Extensive material on the study of resonant RS in semiconductors has been accumulated [1], and interest in it persists up till now [2][3][4][5][6]. Experimental investigations of resonant HRS in semiconductors were reported earlier [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

The Raman and hyper-Raman scatterings of light by LO-phonons in a CdS crystal under excitation near resonance with the A_n=2and B_n=1exciton levels

Semenova

2022

J. Phys.: Conf. Ser.

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The theoretical treatment of the scattering of light by LO-phonons under one-photon and two-photon excitation near resonance with the An=2 and Bn=1 exciton levels in a CdS crystal is given. The influence of the complex structure of the top valence band on these levels is taken into account by the use of the perturbation theory. Assumption of the nonzero matrix elements of the dipole transitions between the A and B sub-bands leads to the fact that the linear combinations of the 1s and 2p exciton wave functions conform to the two “perturbed” energy levels. The possible manifestations of this mixing of states in the resonance Raman and hyper-Raman scatterings are considered.

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Fano effect in resonant Raman spectrum of CdTe

Cited by 18 publications

References 20 publications

Electron–Phonon Fano Effect in Cubic Boron Nitride

Electron–Phonon Fano Effect in Cubic Boron Nitride

Tuning the electron–phonon interaction via exploring the interrelation between Urbach energy and fano-type asymmetric raman line shape in GO-hBN nanocomposites

The Raman and hyper-Raman scatterings of light by LO-phonons in a CdS crystal under excitation near resonance with the A_n=2and B_n=1exciton levels

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Fano effect in resonant Raman spectrum of CdTe

Cited by 18 publications

References 20 publications

Electron–Phonon Fano Effect in Cubic Boron Nitride

Electron–Phonon Fano Effect in Cubic Boron Nitride

Tuning the electron–phonon interaction via exploring the interrelation between Urbach energy and fano-type asymmetric raman line shape in GO-hBN nanocomposites

The Raman and hyper-Raman scatterings of light by LO-phonons in a CdS crystal under excitation near resonance with the An=2and Bn=1exciton levels

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Product

Resources

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The Raman and hyper-Raman scatterings of light by LO-phonons in a CdS crystal under excitation near resonance with the A_n=2and B_n=1exciton levels