Fano resonance in the impurity photoconductivity spectrum of InP doped with shallow donors

We report the experimentally revealed peculiarities in the impurity photoconductivity spectra of bulk n-GaAs and n-InP samples doped with shallow impurities. These features are essentially the photoconductivity steps at the photoexcitation quanta energies near (2, 3, 4, 5) • ω LO , where ω LO is the energy of the longitudinal optical phonon. A theoretical description of the observed peculiarities is proposed. It is shown that the photoconductivity features are determined by the energy dependence of the rate of electron energy relaxation.

Section: Discussionmentioning

confidence: 99%

Section: Analysis Of the Features Near (3 4 5) • ω Lo In The Photocon...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Features in the impurity photoconductivity spectra ofn-GaAs andn-InP at energies multiple of the optical phonon energy

Aleshkin¹,

Антонов²,

Burdeiny³

2012

“…The resonance states should be understood here as the states in which an electron is at the ground donor level, with the system having one longitudinal optical (LO) phonon. A method to describe these peculiarities for a hydrogen-like impurity given polar interaction of electrons with the LO-phonons was developed in [1][2][3] within the Fano theory formalism [4]. The electron energy in the continuum, corresponding to the resonance states, is less than the energy of a longitudinal optical phonon by the value of ionization energy.…”

Section: Introductionmentioning

confidence: 99%

Resonance Coulomb scattering by shallow donor impurities in GaAs and InP

Aleshkin¹,

Burdeiny²

2011

We report a theoretical study on characteristics of the Coulomb scattering of conduction electrons by donor centers in GaAs and InP, taking into account the influence of resonance states. The resonance states occur through the polar interaction of electrons with the longitudinal optical phonons. The obtained spectra of the total and transport Coulomb scattering cross-sections exhibit asymmetric resonance peculiarities in the vicinity of the resonance energy. It is shown that these peculiarities are no small effect: near the resonance energy the cross-sections may largely differ from the corresponding values for a regular Rutherford scattering.Parameters δ l define the scattering phases.

“…A method for describing these features for a hydrogenlike impurity within the Fano theory formalism [4] in the case of electron interaction with polar optical phonons was developed in [5,6]. The resonance form in this theory is described by two values: width and dimensionless Fano parameter Q that characterizes the form of the resonance curve.…”

Section: Introductionmentioning

confidence: 99%

Calculation of the parameters for the Fano resonance in the impurity photocurrent spectrum of semiconductors doped with hydrogen-like donors

Aleshkin¹,

Burdeiny²,

Gavrilenko³

2010

We apologize to the readers of Semiconductor Science and Technology for erroneous data in the tables 1 and 2. Unfortunately, our lack of attention led to incorrect numerical values for line width (η) and Q(η) parameter in table 1 and for almost all columns in table 2 (except LO-phonon lifetime). Here we provide the correct versions of the two tables.We have to make one note. From the corrected table 2 it is clearly seen that the value of the ratio τ LO /h for InSb in table 2 is less than unity, so our theory is not valid for InSb. The actual parameters of the Fano resonance should significantly differ from those mentioned in table 2 for this semiconductor. But we kept the row with InSb for illustrative purposes.