Far-infra-red microbolometers made with tellurium and bismuth

Wentworth, Stuart M.; Neikirk, Dean P.

doi:10.1049/el:19891047

Cited by 18 publications

(5 citation statements)

References 4 publications

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“…TCR is a bolometer material-specific evaluation index defined by the rate of change in resistance per unit temperature. 25,26 That said, with the VO x thin films containing V 2 O 5 , V 3 O 7 , and V 6 O 13 fabricated when P f = 1.5 to 10 Pa (see Figure 3), we were not able to obtain TCRs of -2%/K or higher. The TCR was found from the slope at room temperature (27 • C [300 K]) in the R-T characteristics shown in Figure 5.…”

Section: Fabrication Of Vo X Thin Film On Si 3 N 4 /Sio /Si Substratementioning

confidence: 86%

“…However, the TCR values exceeding -2%/K obtained in our measurements were one magnitude of order greater than those typically obtained when bismuth or titanium is used as the bolometer material. 25,26 That said, with the VO x thin films containing V 2 O 5 , V 3 O 7 , and V 6 O 13 fabricated when P f = 1.5 to 10 Pa (see Figure 3), we were not able to obtain TCRs of -2%/K or higher. Moreover, as discussed in connection with Figure 5, the resistance at room temperature increased significantly when T f = 620 • C.…”

Section: Fabrication Of Vo X Thin Film On Si 3 N 4 /Sio /Si Substratementioning

confidence: 86%

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Evaluation of Characteristics in VOx Microbolometer Fabricated by MOD on Si3N4/SiO2 Membrane

et al. 2018

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VO x thin films were fabricated on Si 3 N 4 /SiO 2 /Si substrates by firing precursor films, which were fabricated by metal-organic decomposition (MOD), with a reduced pressure. Resistance-temperature (R-T) characteristics of the films indicating the phase transition from metal to insulator with about 4 orders of resistance change specified with VO 2 (M) were obtained. Furthermore, the films fabricated with a firing temperature of 580-600 • C had temperature coefficient of resistance (TCR) of −2.8 to −2.9 %/K at room temperature. After fabricating VO x microbolometers with 40 × 10 m 2 using the films on Si 3 N 4 /SiO 2 /Si substrates, Si with a thickness of about 340 m was etched using Deep-RIE and XeF 2 vapor etching from the backside of the substrate.Then, the VO x microbolometer was completed on Si 3 N 4 /SiO 2 membrane. The VO x microbolometer on Si 3 N 4 /SiO 2 membrane had a high DC sensitivity of 2310 W −1 , which was about 15 times higher than that of the microbolometer on the Si 3 N 4 /SiO 2 /Si substrate. K E Y W O R D SDeep-RIE, membranes, metal-organic decomposition (MOD), microbolometers, vanadium oxide (VOx) 12

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Section: Fabrication Of Vo X Thin Film On Si 3 N 4 /Sio /Si Substratementioning

confidence: 86%

Section: Fabrication Of Vo X Thin Film On Si 3 N 4 /Sio /Si Substratementioning

confidence: 86%

Evaluation of Characteristics in VOx Microbolometer Fabricated by MOD on Si3N4/SiO2 Membrane

et al. 2018

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“…7,11) These values are over one order of magnitude higher than those of conventional bismuth (Bi) and titanium (Ti) bolometers. 12,13) For fabricating VO 2 thin films, pulsed laser deposition, sputtering, chemical solution deposition (CSD) and so on have been utilized. [14][15][16][17][18] In these growth techniques, metal-organic decomposition (MOD), which is categorized in CSD, has the advantages of no requirement for a large facility, low operational cost, and capability of fabricating large-area films.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of V_1-xTi _x O₂ thin films by metal-organic decomposition using carbon thermal reduction

Hai

Kawahara

Samura

et al. 2019

Jpn. J. Appl. Phys.

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V1-xTixO2 thin films were fabricated on Si3N4/SiO2/Si substrates by metal-organic decomposition. The VO2 phase in the range of x = 0–0.25 was obtained by preparing the precursor film calcined at 300 °C for 15 min in a N2 atmosphere and firing these films at 580 °C–600 °C for 15 min in a N2 atmosphere. V1-xTixO2 thin films were successfully obtained by carbon thermal reduction. In the resistance–temperature characteristics, the reduction of hysteresis and the broadening of metal–insulator transition (MIT) occurred with increasing x, and hysteresis and a significant resistance change due to the MIT disappeared at x = 0.25. The temperature coefficients of resistance (TCRs) at x = 0–0.25 were as high as −4.1∼−5.5%/K at 27 °C. At x = 0.25, TCRs were −4.3∼−7.0%/K from 45 °C to 65 °C and a flat temperature dependence of TCR were realized at the temperature range from 10 °C to 80 °C.

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“…Vanadium dioxide (VO 2 ) is a promising material for bolometers because of its high temperature coefficient of resistance (TCR), about 2.0-6.0%/K at room temperature [8]. This value is over one order of magnitude higher than those of semi-metallic titanium (Ti) and bismuth (Bi) (0.1-0.4%/K) [9,10]. On the other hand, considering a thin-film antenna coupled to a detector, we have focused on a slot antenna because of its simple configuration and directivity perpendicular to the substrate [5,11,12].…”

Section: Introductionmentioning

confidence: 99%

Characteristics of thin‐film spiral antenna‐coupled Bi microbolometer fabricated on Si₃N₄/SiO₂ membrane

Uchida

Matsushita

Tachiki

2018

IEEJ Transactions Elec Engng

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A thin-film spiral antenna-coupled Bi microbolometer was fabricated on a Si 3 N 4 /SiO 2 membrane. The membrane was realized by wet etching from the back of an Si substrate using a 26 wt% KOH solution. The antenna was designed in accordance with the current band theory so that it covers the frequency range of 140-220 GHz. The experimental patterns for antennas located on the membrane and on the membrane backed by a copper plate reflector were in good agreement with theoretical patterns for the antenna located in air. Furthermore, a wide band characteristic of the antenna ranging from 140 to 220 GHz was obtained. The responsivity of the Bi microbolometer on the membrane estimated from the DC sensitivity under the irradiation of 220 GHz electromagnetic wave was 110 V/W. This value is about one order of magnitude higher than that of a Bi bolometer fabricated on a dielectric substrate.

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Far-infra-red microbolometers made with tellurium and bismuth

Cited by 18 publications

References 4 publications

Evaluation of Characteristics in VO<sub>x</sub> Microbolometer Fabricated by MOD on Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> Membrane

Evaluation of Characteristics in VO<sub>x</sub> Microbolometer Fabricated by MOD on Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> Membrane

Fabrication of V_1-xTi _x O₂ thin films by metal-organic decomposition using carbon thermal reduction

Characteristics of thin‐film spiral antenna‐coupled Bi microbolometer fabricated on Si₃N₄/SiO₂ membrane

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Far-infra-red microbolometers made with tellurium and bismuth

Cited by 18 publications

References 4 publications

Evaluation of Characteristics in VO<sub>x</sub> Microbolometer Fabricated by MOD on Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> Membrane

Evaluation of Characteristics in VO<sub>x</sub> Microbolometer Fabricated by MOD on Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> Membrane

Fabrication of V1-x Ti x O2 thin films by metal-organic decomposition using carbon thermal reduction

Characteristics of thin‐film spiral antenna‐coupled Bi microbolometer fabricated on Si3N4/SiO2 membrane

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Product

Resources

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Fabrication of V_1-xTi _x O₂ thin films by metal-organic decomposition using carbon thermal reduction

Characteristics of thin‐film spiral antenna‐coupled Bi microbolometer fabricated on Si₃N₄/SiO₂ membrane