We review far-infrared studies of spin resonance (SR) in narrow-gap semiconductors, with emphasis on SR of the conduction band. While the SR transition is normally electric-dipole-forbidden, it is well known that there exist mechanisms (e.g. 'non-parabolicity' or inversion asymmetry) which relax these selection rules. We discuss these mechanisms and their relative importance. Although we concentrate in t h i s review on the r,-like conduction band of InSb, we also review experimental results on other materials (e.g. HgSe, HgTe, Hg, -,Mn,Se). We discuss the anisotropy of the spin resonance and compare the g factors of free and donor-bound electrons. Furthermore, we describe certain 'external' effects which influence the observation of SR in semiconductors, e.g. spin-spin exchange interaction in diluted magnetic semiconductors, plasma-shifted SR and uniaxial stress. Special attention is given to the interference of the electric dipole and magnetic dipole matrix elements, which provides a unique opportunity for the determination of the inversion asymmetry parameter (including its sign) in zincblende narrow-gap semiconductors.