Far infrared reflectivity spectra of lead-telluride doped with Ytterbium

Study of structural and optical properties of sprayed WO3 thin films using enhanced characterization techniques along with the Boubaker Polynomials Expansion Scheme (BPES)

“…In the same line, the deposited films showed a relatively high absorption coefficient of around 10 4 cm −1 and exhibited a direct transition gap which lies within 2.6-3.6 eV domain. It has been found that these materials were n-type and electrical measurements are in progress in order to reach the resistivity of such thin films [32][33][34][35][36][37][38][39][40][41]. This result is very encouraging since a costless and simple spray pyrolysis technique can be used to prepare such oxides and open the way of possible valorisation of the prepared films in many optoelectronic applications.…”

A study of sulfur/selenium substitution effects on physical and mechanical properties of vacuum-grown ZnS1−xSex compounds using Boubaker polynomials expansion scheme (BPES)

“…Investigation of crystals based on wide band gap II-VI semiconductor compounds [1][2][3][4][5] attract considerable attention as a result of wide applications in lasers and photovoltaic cells production in relation, i.e. with laser television and high quality color printing systems.…”

Enhancement of electrical transport through the anisotropic nanostructure performance of heavily Yb-doped PbSe0.2Te0.8 thin films

“…The reduction in the lattice constant is the first indicator of the insertion of Yb into the cages of the Pb 1Àx Yb x Se 0.2 Te 0.8 structure, thus changing Pb þ2 ions (radius ¼ 1.2 Å) into smaller Yb þ3 ions (radius ¼ 1.008 Å). A small fraction of the Yb ions (x ¼ 0.015) in the thin film decreased because of the transfer from a magnetic Yb 3þ (4f 13 ) charge state to a non-magnetically active charge state Yb 2þ (4f 14 ), which is usually present in x ¼ 0.03e0.105 [19,20]. The strain of the lattice exhibited the same behavior (Fig.…”