Far infrared studies on stannite and wurtzstannite type compounds

Himmrich, M.; Haeuseler, H.

doi:10.1016/0584-8539(91)80283-o

Cited by 281 publications

(200 citation statements)

References 13 publications

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“…Peak fitting with Lorentzian curves indicates three weaker contributions encompassed in the broad peak, at 251-255, 288-291 and 354-360 cm -1 . These peak positions match quite well the response expected from CZTS [11,12]. Sample C3 also shows a small peak at 475 cm -1 which could originate from CuS [13] since this sample has the highest Cu-content.…”

Section: Resultssupporting

confidence: 79%

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Annealing behavior of reactively sputtered precursor films for Cu2ZnSnS4 solar cells

et al. 2013

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Reactively sputtered Cu-Zn-Sn-S precursor films are prepared and recrystallized by rapid thermal processing to generate Cu 2 ZnSnS 4 solar cell absorber layers. We study how the film properties are affected by substrate heating and composition. The stress, density and texture in the films were measured. Compressive stress was observed for the precursors but did not correlate to the deposition temperature, and had no influence on the properties of the annealed films or solar cells. However, the substrate temperature during precursor deposition had a large effect on the behaviour during annealing and on the solar cell performance. The films deposited at room temperature had, after annealing, smaller grains and cracks, and gave shunted devices. Cracking is suggested to be due to a slightly higher sulfur content, lower density or to minor differences in material quality. The grain size in the annealed films seems to increase with higher copper content and higher precursor deposition temperature. The best device in the current series gave an efficiency of 4.5 %.

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Section: Resultssupporting

confidence: 79%

“…All peaks can be explained by the presence of CZTS [11,12]. The 348-350 cm -1 peak fits also with the main mode of ZnS [15] which would agree with the samples being slightly Zn-rich.…”

Section: Resultssupporting

confidence: 70%

Annealing behavior of reactively sputtered precursor films for Cu2ZnSnS4 solar cells

et al. 2013

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“…Figure 5 presents the Raman spectra of the CZTS thin film using different excitation laser wavelengths. The main peak of CZTS, P1, is located at 338-339 cm −1 , it has been associated to the vibration of sulphur atoms [23] and is the strongest peak at all excitation wavelengths. This is strong evidence that CZTS with the kesterite/stannite structure is the dominant phase present.…”

Section: Czts Films' Depth Raman Scattering Analysismentioning

confidence: 99%

Study of polycrystalline Cu2ZnSnS4 films by Raman scattering

Fernandes

Salomé

Cunha

2011

Journal of Alloys and Compounds

662

337

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Cu 2 ZnSnS 4 (CZTS) is a p-type semiconductor that has been seen as a possible low-cost replacement for Cu(In,Ga)Se 2 in thin film solar cells. So far compound has presented difficulties in its growth, mainly, because of the formation of unwanted phases like ZnS, Cu x SnS x+1 , Sn x S y , Cu 2−x S and MoS 2 . X-ray diffraction analysis (XRD), which is mostly used for phase identification cannot resolve some of these phases from the kesterite/stannite CZTS and thus the use of a complementary technique is needed. Raman scattering analysis can help distinguishing these phases not only laterally but also in depth. Knowing the absorption coefficient and using different excitation wavelengths in Raman scattering analysis, one is capable of profiling the different phases present in multi-phase CZTS thin films.This work describes in a concise form the methods used to grow chalcogenide compounds, such as, CZTS, Cu x SnS x+1 , Sn x S y and cubic ZnS based on the sulphurization of stacked metallic precursors. The results of the films' characterization by XRD, electron backscattered diffraction and scanning electron microscopy/energy dispersive spectroscopy techniques are presented for the CZTS phase. The limitation of XRD to identify some of the possible phases that can remain after the sulphurization process are investigated. The results of the Raman analysis of the phases formed in this growth method and the advantage of using this technique in identifying them are presented. Using different excitation wavelengths it is also analysed the CZTS film in depth showing that this technique can be used as non destructive methods to detect unwanted phases.

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“…9,19,20 On the other hand, identification of secondary phases in CZTS in some cases cannot be done with the use of green excitation, but rather requires the use of different excitation wavelengths leading to near resonant excitation conditions for certain secondary phase compounds and they enable enhancement of their modes for more straightforward detection. 10 For example, ultraviolet (UV) excitation allows very sensitive detection of ZnS, which is the most expected secondary phase in Zn rich and Cu poor device grade CZTS layers.…”

mentioning

confidence: 99%

Multiwavelength excitation Raman scattering study of polycrystalline kesterite Cu2ZnSnS4 thin films

Dimitrievska¹,

Fairbrother²,

Fontané³

et al. 2014

Applied Physics Letters

267

149

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This work presents a complete analysis of all Raman active modes of Cu 2 ZnSnS 4 measuring with six different excitation wavelengths from near infrared to ultraviolet. Simultaneous fitting of spectra allowed identification of 18 peaks from device grade layers with composition close to stoichiometry that are attributed to the 27 optical modes theoretically expected for this crystalline structure, including detection of 5 peaks not observed previously, but theoretically predicted. Resonance effects are assumed to explain the observed increase in intensity of weak modes for near infrared and ultraviolet excitations. These results are particularly relevant for experimental discrimination of Raman modes related to secondary phases. V C 2014 AIP Publishing LLC.

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Far infrared studies on stannite and wurtzstannite type compounds

Cited by 281 publications

References 13 publications

Annealing behavior of reactively sputtered precursor films for Cu2ZnSnS4 solar cells

Annealing behavior of reactively sputtered precursor films for Cu2ZnSnS4 solar cells

Study of polycrystalline Cu2ZnSnS4 films by Raman scattering

Multiwavelength excitation Raman scattering study of polycrystalline kesterite Cu2ZnSnS4 thin films

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