Fast and Accurate in-Line Monitor of Boron Implantation Energy and Dose by Spectroscopic Ellipsometry

Abstract

Boron is a specified dopant applied at semiconductor manufacturing, which used for ultra-shallow junction (USJ) formation and stable SiGe stressed channel configuration at advanced generation. Aggressive device scaling over the last decade leads the precise implantation control much important and critical. In this paper, a non-destructive and fast technology for inline Boron implanted depth and dose concentration measurement was presented using Spectroscopic Ellipsometry (SE) methodology. Excellent correlation with SIMS reference result achieved. Further, the implanted processes quene time (Q-time) issue was also be considered for stable production monitor in foundry side. The metrology theory could extend to other doping species at medium and low energy application field.