Fast and reliable calculation of the two‐diode model without simplifications

Suckow, Stephan; Pletzer, T.M.; Kurz, H.

doi:10.1002/pip.2301

Cited by 80 publications

(45 citation statements)

References 31 publications

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“…In case of the single‐diode model, methods to determine the model parameters from the limited information provided by manufacturer's data sheets have already been developed, but require the solution of high‐dimensional nonlinear equation systems. Here, we focus our investigations on the double‐diode model, since for conventional silicon cells, it provides better accuracy in fitting measured data, especially in the vicinity of the maximum power point . A first scheme for the double diode parameter extraction relying solely on data points available from cell data sheets (short circuit current, open circuit voltage, current and voltage at maximum power point) was presented by Ref., but suffers from some impracticalities and incompleteness of the analysis.…”

Section: Introductionmentioning

confidence: 99%

Extraction of a photovoltaic cell's double‐diode model parameters from data sheet values

Sulyok

Summhammer

2018

Energy Science & Engineering

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In the data sheets of photovoltaic cells, manufacturers usually only provide selected points of the cell's current‐voltage curve, that is, short‐circuit current, open‐circuit voltage and current and voltage at the maximum power point. However, these three parameters do not suffice to deduce the cell's double diode model parameters. Thus, it is not possible to reproduce the complete current‐voltage characteristics. Here, we point out how the range of the double diode parameters can be determined from the available data points and present approximately valid conditions which can be exploited to derive unique double diode parameter sets. The introduced methods rely on the solution of one‐dimensional equations and the intervals within which their roots lie are established. Thus, a straightforward extraction of the parameters is possible. The reliability of four different methods is checked by comparison with real cells whose double diode parameters are known for varying temperature and illumination conditions as well as with numerically generated parameters. Accurate parameter guesses and a faithful reproduction of the cell's IV‐curve can be achieved, in particular, for present‐day high‐quality cells.

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Section: Introductionmentioning

confidence: 99%

Extraction of a photovoltaic cell's double‐diode model parameters from data sheet values

Sulyok

Summhammer

2018

Energy Science & Engineering

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“…The used system is developed and constructed by the calibration laboratory (CalLab) of the Fraunhofer Institute for Solar Energy Systems Freiburg and has a measurement precision of +/− 1% relative as it is given in the specification of the system. The I–V curves allow the calculation of typical cell parameters ( J SC , V OC , FF and η ) as well as the extraction of the two‐diode model values ( J PH , J 01 , J 02 , R S and R P ) according to the following equation:

J = J_{PH} - \frac{V + J R_{normalS}}{R_{P}} - J_{01} (e^{\frac{q ((), V + J R_{S})}{k_{B} T}} - 1) - J_{02} (e^{\frac{q ((), V + J R_{S})}{n_{2} k_{B} T}} - 1)

…”

Section: Methodsmentioning

confidence: 99%

“…Typical industrial type mc‐Si solar cells as described in Section 2.1 were taken for the investigation in this work. The solar cells were characterised by illuminated I–V curve measurements to estimate cell parameters ( J SC , V OC , FF and η ) followed by the calculation of two‐diode model values ( J PH , J 01 , J 02 , R S and R P ) . Also, the first EL images for the ratio image calculation (Section 2.2) were taken at this stage.…”

Section: Methodsmentioning

confidence: 99%

Influence of cracks on the local current–voltage parameters of silicon solar cells

Pletzer

Mölken

Rißland

et al. 2013

Progress in Photovoltaics

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The existence of cracks in silicon solar cells can drastically reduce the electrical performance of an individual cell and even of an entire photovoltaic module. An in-depth understanding of the influence of cracks on solar cells enables therefore calculations of the crack impact and other following effects on module level. This paper shows a detailed analysis of the electrical influence of cracks with two different spatially resolved methods including global and local current-voltage characteristics. The main influence of cracks is an increased recombination current density in the depletion region, which is clearly shown by spatially resolved dark lock-in thermography measurements with local current-voltage investigation. This increased recombination current density affects further cell parameters such as the efficiency, which is confirmed also by the global current-voltage characteristics. The additionally used ratio image technique based on electroluminescence measurements is in comparison with the local current-voltage method, the more reliable and faster method for the crack detection itself, and allows on cell-level and module-level a continuous inspection of cracks.

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“…As a result, the equivalent circuit of the solar cell is described at different levels of approximation. The two-diode model (Fig 1a) is basically the most complex and accurate in the engineering literature [4]. The photocurrent I L is produced by a current source, primarily depending on solar irradiance.…”

Section: Introductionmentioning

confidence: 99%