Fast capacitance extraction of actual 3-D VLSI interconnects using quasi-multiple medium accelerated BEM

Yu, Wenjian; Wang, Zeyi; Gu, Jiangchun

doi:10.1109/tmtt.2002.806923

Cited by 61 publications

(2 citation statements)

References 17 publications

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“…Therefore, many researchers have used diverse accelerated BEMs (e.g. FastCap, GIMEI, ODDM, QMM, etc) for efficiently solving the large-scale problem of VLSI & EM systems [12][13][14][15][16]. To the best knowledge of the authors, accelerated BEMs are very efficient for large-scale problems because they can reduce CPU time and memory requirement from exponential order to logarithmic order.…”

Section: Numerical Methods For Mems and Em Devicesmentioning

confidence: 99%

An alternatively efficient method (DBEM) for simulating the electrostatic field and levitating force of a MEMS combdrive

Liao¹,

Chyuan²,

Chen³

2004

J. Micromech. Microeng.

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For MEMS combdrive design, the reduction of levitating force due to electrostatic fields is very important, and an accurate electrostatic analysis is essential and indispensable. For diverse MEMS combdrive designs, the boundary element method (BEM) has become a better method than the domain-type finite element method (FEM) because the BEM can provide a complete solution in terms of boundary values only, with substantial saving in modeling effort. Since dual BEM (DBEM) has some advantages over conventional BEM for a singularity, the DBEM was used to simulate the fringing of field around the edges of the fixed fingers and movable fingers of MEMS combdrives for diverse design cases. A number of electrostatic problems for typical MEMS combdrive designs were analyzed to check the efficiency and validity of this new technique. It is found that the numerical results computed by coarse mesh DBEM match the reference data from a large refined mesh FEM very well, and the accuracy and performance of DBEM are also better than those of conventional BEM for solving the electric intensity field of MEMS combdrives. By way of the DBEM presented in this paper, an accurate and reasonable electrostatic field can be obtained, and the follow-up control method of levitating force for the MEMS combdrive can be implemented more precisely.

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Section: Numerical Methods For Mems and Em Devicesmentioning

confidence: 99%

An alternatively efficient method (DBEM) for simulating the electrostatic field and levitating force of a MEMS combdrive

Liao¹,

Chyuan²,

Chen³

2004

J. Micromech. Microeng.

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show abstract

“…Fast and accurate estimation of parasitic capacitances is a very important aspect of modern integrated circuits designing [29,30]. Due to the growing complexity of the geometry of systems of conductors new numerical approaches are sought to deal with the problem.…”

Section: Application Of Scalable Trefftz Matrices For Capacitance Extmentioning

confidence: 99%

The scalability of the matrices in direct Trefftz method in 2D Laplace problem

Borkowski

2016

Engineering Analysis with Boundary Elements

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This paper presents an interesting property of the matrices that may be obtained with the use of direct Trefftz method. It is proved analytically for 2D Laplace problem that values of the elements of matrices describing the capacitance of two scaled domains are inversely proportional to the scalability factor. As an example of the application the capacitance extraction problem is chosen. Concise description of the algorithm in which the scalability property can be utilized is given. Furthermore some numerical results of the algorithm are presented.

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Capacitance Extraction

Yu¹,

Wang²

2005

Encyclopedia of RF and Microwave Engineering

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With the advances in integrated circuit (IC) technology, the effects of electromagnetic coupling among the metal interconnect lines have greatly influenced circuit performance in both VLSI circuits and microwave ICs. Therefore, the modeling and accurate extraction of interconnect capacitance has become a subject of advanced research in these fields. In this article, the fundamental theory, contemporary methodology, and algorithms of capacitance extraction are presented. First, the electrostatic basis of the capacitor is introduced and the capacitance for a multiconductor system is defined. Then, the practical methodologies of capacitance extraction for VLSI interconnects are presented, ranging from 1D, 2D, 2.5D to 3D methods and including the technique used for the task of current full‐chip extraction. Various numerical techniques of 3D capacitance extraction are discussed, some of which represent the frontier of this research field. For 3D capacitance extraction, the state of the art in fast boundary‐element methods and semianalytical approaches are surveyed, with a fairly complete list of references. Finally, some future tends on capacitance extraction are discussed.

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Fast capacitance extraction of actual 3-D VLSI interconnects using quasi-multiple medium accelerated BEM

Cited by 61 publications

References 17 publications

An alternatively efficient method (DBEM) for simulating the electrostatic field and levitating force of a MEMS combdrive

An alternatively efficient method (DBEM) for simulating the electrostatic field and levitating force of a MEMS combdrive

The scalability of the matrices in direct Trefftz method in 2D Laplace problem

Capacitance Extraction

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