Fast deposition of thick diamond-like carbon films by ion-beam technique

Liao, Bin; Yu, Jingjing; Wang, Yudong; Bian, Baoan; Jiang, Qili; Zhang, Xu; Xin, Wu; Ying, Minju

doi:10.1007/s00339-017-1161-5

Cited by 7 publications

(1 citation statement)

References 15 publications

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“…Instead, we resort to the other route, namely surficial modification specifically based on ion beam implantation and deposition techniques. [15][16][17][18][19][20][21] To be more precise, the metal vapor vacuum arc (MEVVA) and filtered cathodic vacuum arc (FCVA) [16] are employed to develop the glue-free electronic substrates that can endure liquidnitrogen temperatures. The FCVA technique, in comparison to magnet-controlled sputtering, yields ions with higher energies which in turn can effectively promote the ion deposition onto the substrate surface.…”

Section: Introductionmentioning

confidence: 99%

Developing cold-resistant high-adhesive electronic substrate for WIMPs detectors at CDEX*

Liu¹,

Cheng²,

Pang³

et al. 2020

Chinese Phys. B

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Herein we report a prototypical electronic substrate specifically designed to serve the weakly interacting massive particles (WIMPs) detectors at the China Dark Matter Experiment (CDEX). Because the bulky high-purity germanium (HPGe) detectors operate under liquid-nitrogen temperatures and ultralow radiation backgrounds, the desired electronic substrates must maintain high adhesivity across different layers in such cold environment and be free from any radioactive nuclides. To conquer these challenges, for the first time, we employed polytetrafluoroethylene ((C2F4) n ) foil as the base substrate, in conjunction with ion implantation and deposition techniques using an independently developed device at Beijing Normal University for surface modification prior to electroplating. The remarkable peeling strengths of 0.88±0.06 N/mm for as-prepared sample and 0.75±0.05 N/mm for that after 2.5-days of soaking inside the liquid nitrogen were observed, while the regular standards commonly require 0.4 N/mm ∼ 0.6 N/mm for electronic substrates.

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