Fast epitaxy by PVT of SiC in hydrogen atmosphere

Syväjärvi, Mikael; Ciechonski, Rafal; Yazdi, Gholamreza; Yakimova, Rositsa

doi:10.1016/j.jcrysgro.2004.11.129

Cited by 9 publications

(2 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[1][2][3] 4H-SiC ingots are usually grown by the physical vapor transport (PVT) method, during which hydrogen gas (H 2 ) is used to optimize the surface of the seed crystal and tune the growth condition of 4H-SiC. [4][5][6][7] 4H-SiC epilayers are often homoepitaxially grown by chemical vapor deposition (CVD), during which H 2 is widely used as the carrier gas. [8][9][10][11] It should be also noted that H impurities are frequently incorporated during the processing of 4H-SiC-based devices.…”

Section: Introductionmentioning

confidence: 99%

Assessing the effect of hydrogen on the electronic properties of 4H-SiC

Huang¹,

Wang²,

Zhang³

et al. 2022

Chinese Phys. B

View full text Add to dashboard Cite

As a common impurity in 4H-silicon carbide (4H-SiC), hydrogen (H) may play a role in the tuning of the electronic properties of 4H-SiC. In this work, we systemically explore the effect of H on the electronic properties of both n-type and p-type 4H-SiC. The passivation of H for intrinsic defects such as carbon vacancies (VC) and silicon vacancies (VSi) in 4H-SiC is also evaluated. We find that interstitial H at the bonding center of the Si-C bond (Hi bc) and interstitial H at the tetrahedral center of Si (Hi Si-te) dominate the defect configurations of H in p-type and n-type 4H-SiC, respectively. For n-type 4H-SiC, the compensation of Hi Si-te is found to pin the Fermi energy and hinder the increase of electron concentration for highly N-doped 4H-SiC. The compensation of Hi bc is negligible compared to that of VC on the p-type doping of Al-doped 4H-SiC. We have further examined whether H can passivate VC and improve carrier lifetime in 4H-SiC. It turns out that nonequilibrium passivation of VC by H is effective to eliminate the defect states of VC, which enhances the carrier lifetime of moderately doped 4H-SiC. Regarding the quantum-qubit applications of 4H-SiC, we find that H can readily passivate VSi during the creation of VSi centers. Thermal annealing is needed to decompose the resulting VSi-nH (n=1~4) complexes and promote the uniformity of the photoluminescence of VSi arrays in 4H-SiC. The current work may inspire the further development of the impurity engineering of H in 4H-SiC.

show abstract

Section: Introductionmentioning

confidence: 99%

Assessing the effect of hydrogen on the electronic properties of 4H-SiC

Huang¹,

Wang²,

Zhang³

et al. 2022

Chinese Phys. B

View full text Add to dashboard Cite

show abstract

“…On top of these, SiC single crystal is attractive for being the substrate in the heteroepitaxial growth of other important materials [5][6][7]. These applications require polytypic stable, large diameter SiC single crystals with low density of defects including micropipes, voids, dislocations, domains and stacking faults [8][9][10][11][12][13][14][15][16][17][18][19]. However, there are still issues need to be addressed in order to meet the increasing demands of high quality in some specific fields of applications.…”

Section: Introductionmentioning

confidence: 99%

Characterizations and formation mechanism of a new type of defect related to nitrogen doping in SiC crystals

et al. 2014

View full text Add to dashboard Cite

Here, we report a commonly occurring defect related to nitrogen doping in silicon carbide crystals grown by physical vapor transport method while its formation mechanism has remained unclear. It is often mislabeled as planar hexagonal void defect (PHVD) owing to their similar in shape and size on wafer surface. Our results indicate that this is a new type of defect and differs from PHVD with respect to their nitrogen concentrations, void shapes and the connections to micropipe. We found that the carbon-rich vapor during the crystal growth is responsible for the formation of this type of defect. A possible three-stage defect developing mechanism and measures to avoid the defects are proposed.

show abstract

Hybridly Packaged White Light Emitting Diode Composed of Fluorescent SiC and Nitride‐Based Near‐Ultraviolet Light Emitting Diode

Mizuno,

Akiyoshi,

Iwaya

et al. 2024

Physica Status Solidi (a)

View full text Add to dashboard Cite

A combination of fluorescent SiC (f‐SiC) and porous f‐SiC is a promising phosphor material for pure white light emission. Herein, the anodic oxidation condition is optimized to produce porous f‐SiC. Furthermore, a hybridly packaged white light emitting diode (LED) package composed of f‐SiC/porous f‐SiC stacks with a nitride‐based NUV‐LED as an excitation source is fabricated. A distinct pure white light emission and the peak luminous efficacy of 11.6 lm W−1 at a forward current of 10 mA in the NUV‐LED are observed. At the peak luminous efficacy, the estimated internal quantum efficiency of the f‐SiC/porous f‐SiC stacks is ≈80% as the package involved several types of optical and energy losses.

show abstract

Fast epitaxy by PVT of SiC in hydrogen atmosphere

Cited by 9 publications

References 6 publications

Assessing the effect of hydrogen on the electronic properties of 4H-SiC

Assessing the effect of hydrogen on the electronic properties of 4H-SiC

Characterizations and formation mechanism of a new type of defect related to nitrogen doping in SiC crystals

Hybridly Packaged White Light Emitting Diode Composed of Fluorescent SiC and Nitride‐Based Near‐Ultraviolet Light Emitting Diode

Contact Info

Product

Resources

About