2023
DOI: 10.1016/j.apsusc.2023.158186
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Fast fabrication technique for high-quality van der Waals heterostructures using inert shielding gas environment

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Cited by 1 publication
(4 citation statements)
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“…Nguyen et al have reported a novel dry transfer under an Ar shielding gas environment to prevent contamination of the device from bubble impurities to obtain atomically clean interfaces. 66 They demonstrated that utilizing the argon inert gas combined with appropriate temperatures, contact, and peeling speed during heterostructure assembly can readily obtain the bubble-free clean interface of the graphene/h-BN vdW heterojunction with high room temperature graphene mobility of up to 600 000 cm 2 V −1 s −1 (Figure 5b).…”
Section: Removing Residual Polymersmentioning
confidence: 99%
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“…Nguyen et al have reported a novel dry transfer under an Ar shielding gas environment to prevent contamination of the device from bubble impurities to obtain atomically clean interfaces. 66 They demonstrated that utilizing the argon inert gas combined with appropriate temperatures, contact, and peeling speed during heterostructure assembly can readily obtain the bubble-free clean interface of the graphene/h-BN vdW heterojunction with high room temperature graphene mobility of up to 600 000 cm 2 V −1 s −1 (Figure 5b).…”
Section: Removing Residual Polymersmentioning
confidence: 99%
“…Over and above, when flakes are exposed to air during the transfer procedures, contaminants may be adsorbed at the interface, inducing the wrinkle of flakes and forming localized bubbles, so that improving the atmosphere during vdW assembly can significantly reduce the generation of air bubbles. Nguyen et al have reported a novel dry transfer under an Ar shielding gas environment to prevent contamination of the device from bubble impurities to obtain atomically clean interfaces . They demonstrated that utilizing the argon inert gas combined with appropriate temperatures, contact, and peeling speed during heterostructure assembly can readily obtain the bubble-free clean interface of the graphene/h-BN vdW heterojunction with high room temperature graphene mobility of up to 600 000 cm 2 V –1 s –1 (Figure b).…”
Section: Lbl Van Der Waals Assemblymentioning
confidence: 99%
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