Fast ionization dynistor (FID)-a new semiconductor superpower closing switch

Efanov, V.M.; Karavaev, V. V.; Кардо-Сысоев, А. Ф.; Tchashnikov, I.G.

doi:10.1109/ppc.1997.674523

Cited by 21 publications

(8 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Research and development of "nanosecond kickers," i.e., with a pulse length of about 1 ns, is necessary to adapt the injection scheme to storage rings with a common 500 MHz rf system. Although the rise time of a pulser with MOSFET (metal-oxide-semiconductor field-effect transistor) switch is limited to a few ns [20] with present technology, a pulser with FID (fast ionization dynistors) switch [21] may fit our purpose. A pulser capable of generating such short pulses is now commercially available [22], and a nanosecond kicker may be technically feasible.…”

Section: Length (M)mentioning

confidence: 99%

Longitudinal injection scheme using short pulse kicker for small aperture electron storage rings

Aiba

Böge

Marcellini

et al. 2015

Phys. Rev. ST Accel. Beams

View full text Add to dashboard Cite

Future light sources aim at achieving a diffraction limited photon beam both in the horizontal and vertical planes. High gradient quadrupoles and strong chromaticity correction sextupoles in a corresponding ultra-low emittance ring may restrict the physical and dynamic aperture of the storage ring such that offaxis injection and accumulation may become impossible. We propose a longitudinal injection scheme, i.e., injecting an electron bunch onto the closed orbit with a time offset with respect to the circulating bunches. The temporal separation enables a pulsed dipole kicker to situate the injected bunch transversely on-axis without disturbing the circulating bunches if the pulse length is shorter than the bunch spacing. The injected bunch is finally merged to a circulating bunch through synchrotron radiation damping. We present the scheme in detail and its application to the lattice of the MAX IV 3 GeV storage ring. The requirements and feasibility of the pulsed dipole kicker are also discussed.

show abstract

Section: Length (M)mentioning

confidence: 99%

Longitudinal injection scheme using short pulse kicker for small aperture electron storage rings

Aiba

Böge

Marcellini

et al. 2015

Phys. Rev. ST Accel. Beams

View full text Add to dashboard Cite

show abstract

“…All-solid state pulser, based on fast ionization device (FID), can output high-repetition and -stability pulse in [5] [6]. To increase output peak-voltage, Marx circuit is used in [7].…”

Section: Introductionmentioning

confidence: 99%

High-repetition and -stability all-solid state pulsers based on avalanche transistor Marx circuit

Yuan

Ding

Qingsong

et al. 2010

2010 International Conference on Microwave and Millimeter Wave Technology

View full text Add to dashboard Cite

Ultra-wide spectrum (UWS) pulser, in which avalanche transistor is used as its switch, can generate high-repetition and -stability short-pulse, but its power is sharply lower than that of SOS and Tesla generators. Marx circuit is used to increase the power of this type of pulser. Different charged-capacitance and class of Marx circuit determines different waveform and peak-power of output pulse. 20-class and 30-class avalanche transistor Marx circuit pulsers are designed, and the charged-capacitance is 100pF and 470pF, then 4types of waveform are get. The highest output peak-voltage is 2.9kV, the highest repetition can reach 70kHz, and keep a better pulse stability, jitter is less than 40ps.

show abstract

“…It demands development simple in circulation, reliable in maintenance, and, princi pal, whenever possible of compact devices. On the other hand, for the last two decades of research in the field of a solid state physics have resulted in creation of semiconductor devices [1][2], which parameters have allowed to create generators of high-voltage highpower impulses working in a repetitive mode [1,2]. However, till now these semiconductor devices have not found the place directly in development of accelerating facility.…”

Section: Introductionmentioning

confidence: 99%

“…However, till now these semiconductor devices have not found the place directly in development of accelerating facility. The presented paper is devoted to exposition of idea of possible usage of modern semiconductor devices [2] for creation of a compact accelerator device, which, on our opinion, can find rather broad application. In the basis of this device the princi ple stating lies that the inductive storage of electrical energy combined with possibilities of modern semiconductors, is most perspective for creation of high-power pulse devices working with a high repetition rate.…”

Section: Introductionmentioning

confidence: 99%

“…Instead of gas discharges, which limit a pulse-repetition rate and have enough wide jitter in a response time, it is offered to use new semiconducting switches. These switches are capable to reconnect for extremely short time (0,1 -1 ns) currents by magnitude 1 -10 kA at an operation voltage 10 -100 kV [2]. In addition, the process of switching is controlled with split-hair accuracy, as the jitter in operation of keys does not exceed 20 ps.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation