2015
DOI: 10.1016/j.jnucmat.2015.08.004
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Fast joining SiC ceramics with Ti3SiC2 tape film by electric field-assisted sintering technology

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Cited by 67 publications
(41 citation statements)
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“…The Ti 3 SiC 2 powders were used to prepare the tape film (thickness, 60 μm), and then employed as a joining layer. The joining process of SiC with Ti 3 SiC 2 tape film by SPS was similar with our published work . For a convenient comparing, all the SiC/Ti 3 SiC 2 /SiC joining couples were joined at 1300°C with the same heating and cooling rate of 400°C/min.…”
Section: Experimental and Computational Proceduresmentioning
confidence: 83%
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“…The Ti 3 SiC 2 powders were used to prepare the tape film (thickness, 60 μm), and then employed as a joining layer. The joining process of SiC with Ti 3 SiC 2 tape film by SPS was similar with our published work . For a convenient comparing, all the SiC/Ti 3 SiC 2 /SiC joining couples were joined at 1300°C with the same heating and cooling rate of 400°C/min.…”
Section: Experimental and Computational Proceduresmentioning
confidence: 83%
“…To prevent localized heating of the measured area, a low laser power of 12 mw was used. The flexure strengths of the virgin SiC/Ti 3 SiC 2 /SiC joining couples and after postannealing at various temperatures were tested by a four‐point bend method using a laboratory made assembly, as reported elsewhere . At least five pieces of each sample were measured, and their average and maximum deviations were calculated.…”
Section: Experimental and Computational Proceduresmentioning
confidence: 99%
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