Fast particle irradiation of solids: Excitation of secondary electrons and the related energy-deposition function

Miotello, A.; Kelly, Roger; Dapor, Maurizio

doi:10.1016/s0168-583x(98)00080-9

Cited by 9 publications

(3 citation statements)

References 29 publications

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“…It is noticed that the electrons of the target material are strongly attracted by the highly charged SHI along the movement direction and be in motion much farther than the ion trajectories (Miotello et al, 1998). Production of defects and defects clusters, broken bonds and displacement of atoms depends on the energy and fluence of the ions as well as atomic number of incident ion and target material.…”

Section: Discussionmentioning

confidence: 99%

Nickel ion induced modification in the electrical conductivity of Cu nanowires

Chauhan

Rana

2015

Radiation Measurements

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Section: Discussionmentioning

confidence: 99%

Nickel ion induced modification in the electrical conductivity of Cu nanowires

Chauhan

Rana

2015

Radiation Measurements

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“…6. During the passage of swift heavy ion moving with Bohr velocity of electrons of the materials, the electrons are strongly attracted by the highly charged swift heavy ions (SHI) along the direction of the movement and it is generally noticed that these electrons move much farther than the ion range along the ion trajectories [37]. When the energy of swift heavy ions is more than 10 MeV, the dominant form of the energy loss would be electronic energy loss rather than nuclear energy loss.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Structural, optical and electrical properties of ion beam irradiated cadmium selenate nanowires

Rana

Chauhan

2014

J Mater Sci: Mater Electron

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Present study is related to the synthesis of cadmium selenate nanowires via template-assisted electrodeposition approach and their characterization before and after lithium (Li 3? ) ion beam irradiation. Energy-dispersive X-ray analysis and X-ray diffraction study confirmed the synthesis of cadmium selenate nanowires with monoclinic structure. Electrical properties were examined with current-voltage (I-V) source meter using two-probe method. The electrical conductivity augmentation was perceptible for semiconducting nanowires with the increase in the ion beam fluence. The band gap of pristine nanowires was found to be 1.96 eV, while the red shift was observed in the optical band gap of ion irradiated nanowires and it approaches to the value of 1.31 eV at last fluence. In XRD spectra, no evidence was found of phase change or shifting in '2h' position or evolution of any new peak. However, variation in the peak intensities was noticed that could be the result of movement of plane orientation. This study revealed that the defects induced by the ion irradiation and variation in potential gradient with fluence plays a major role in the alteration of the optical and electrical properties of the semiconducting nanowires.

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“…With charged projectiles this can be simplified by measuring target currents with and without permitting the electrons to leave the target, which can be controlled by an appropriate target bias with respect to its environment. As already mentioned above, studies on IIEE have been conducted for many decades, but so far the available data are almost all obtained by measuring secondary electron and ion-beam currents, named the conventional current method [7][8][9][10][11][12]. This method may lead to a large experimental error at grazing incidence because a part of the incident ions may hit the side surface of the target crystal.…”

Section: Introductionmentioning

confidence: 99%

A new method of measuring electron emission induced by low energy ions from solids

Zhang¹,

Breskin²,

Chechik³

et al. 2008

Meas. Sci. Technol.

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A newly developed experimental system for measurements of electron emission induced by low energy ions at below low ion flux (105 ions s−1 cm−2) avoiding the fast emission degradation caused by high ion fluxes (usually applied 1010–1013 ions s−1 cm−2) has been established. The method, based on an event-by-event recording of the emitted cluster of electrons for each impinging ion event, overcomes the difficulty of measurement of reliable ion-induced secondary electron emission (IIEE) yield, associated with fast degradation of the electron yield. This method provides not only the average number (γ) of IIEE under a given ionic impact, but actually higher moments of their distribution, which contains more information on the physical processes involved in the IIEE phenomenon. The secondary electron emission coefficients showed a dependence on the kinetic energy of incident argon ions and protons ranging from 1 keV to 10 keV on hydrogenated diamond film surfaces.

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Fast particle irradiation of solids: Excitation of secondary electrons and the related energy-deposition function

Cited by 9 publications

References 29 publications

Nickel ion induced modification in the electrical conductivity of Cu nanowires

Nickel ion induced modification in the electrical conductivity of Cu nanowires

Structural, optical and electrical properties of ion beam irradiated cadmium selenate nanowires

A new method of measuring electron emission induced by low energy ions from solids

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