Fast recovery diode with local lifetime control using high-energy platinum and helium implantation

Abstract

Schumann from FZR Dresden is acknowledged for platinum and helium implantation. L. Holcova, L. Pina and F. Kondapaneni from Polovodi6e a. s., Prague provided samples and back-end processing. V. Klisky is acknowledged for electron irradiation, D. Kolesnikov for assistance in measurements. KeywordsFast recovery diode, free wheel diode, emerging technology, measurement. Abstract 2.5kV/150A PiN diode is subjected to the local lifetime control using platinum diffusion from implanted layer (Pt": energy 19MeV, dose 5.1012 cm-2). The diffusion is controlled by radiation defects resulting from helium implantation (He2+: energy 10 MeV, dose 1.1012 cm2). This process is proved to locally control excess carrier lifetime at the same level as that of platinum diffusion from PtSi anode contact. The electrical characteristics (DLTS, forward and reverse I-V, OCVD, reverse recovery) are presented. Reverse recovery waveforms up to the dc line voltage of 2kV of the novel devices are compared with those of standard helium and combined helium-electron implantation. The novel technique gives lower leakage current similar forward voltage drop and charge from dynamic avalanche.

The Impacts of Platinum Diffusion to the Reverse Recovery Lifetime of a High Power Diode Devices

“…So, to find a balance in between the main electrical parameter is mandatory when designing and fabricating the power diode. Several papers discusses about the combination of few methods to control the lifetime of a diode as narrated elsewhere [24,25].…”