Fast response and high-performance UV-C to NIR broadband photodetector based on MoS2/a-Ga2O3 heterostructures and impact of band-alignment and charge carrier dynamics

Wadhwa, R. S.; Kaur, Damanpreet; Zhang, Yuchen; Alexender, Akhil; Kumar, Deepu; Kumar, Pradeep; Namboothiry, Manoj A. G.; Qiao, Qiquan; Kumar, Mukesh

doi:10.1016/j.apsusc.2023.157597

Cited by 10 publications

(10 citation statements)

References 66 publications

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“…Therefore, it becomes essential to uncover the hidden concept at the interface. Recently, XPS has been well recognized for its surface-sensitive nature and diverse applications in different fields to explore band alignment of the heterostructures [4,15,23]. In addition, it also helps to investigate the CT mechanism, VBO, CBO, and many more [4,15].…”

Section: Band Alignment Studymentioning

confidence: 99%

“…Apart from this, the carrier transport (CT) at the heterointerface, which is a predominant factor in controlling the device performance, can be tuned by the type of band alignment (type-I, II, III) at the interface [4,13]. So far, various Ga 2 O 3 -TMDCs heterostructures (Ga 2 O 3 -MoS 2 , Ga 2 O 3 -PtSe 2, and Ga 2 O 3 -MoTe 2 ) have been fabricated and illustrated the better device performance than their stack materials [15][16][17]. However, to the best of our knowledge, no study of PtS 2 -Ga 2 O 3 heterostructure has been reported so far, which motivates us to explore this heterostructure.…”

Section: Introductionmentioning

confidence: 99%

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2D–3D heterostructure of PtS_2−x/Ga₂O₃ and their band alignment studies for high performance and broadband photodetector

Bassi,

Kaur,

Dahiya

et al. 2024

Nanotechnology

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For deep ultraviolet (UV-C) photodetectors, Gallium oxide (Ga2O3) is a suitable candidate owing to its intrinsic ultra-wide band gap and high stability. However, its detection is limited within the UV-C region, which restricts it to cover a broad range, especially in visible and near-infrared (NIR) region. Therefore, constructing a heterostructure of Ga2O3 with an appropriate material having a narrow band gap is a worthwhile approach to compensate for it. In this category, PtS2 group-10 transitional metal dichalcogenide (TMDC) stands at the top owing to its narrow band gap (0.25-1.65 eV), high mobility, and stability for heterostructure synthesis. Moreover, heterostructure with Ga2O3 sensing in UV and PtS2 broad response in visible and IR range can broaden the spectrum from UV to NIR and to build broadband photodetector. In this work, we fabricated a 2D-3D PtS2-x/Ga2O3 heterostructure based broadband photodetector with detection from UV-C to NIR region. In addition, the PtS2-x/Ga2O3 device shows a high responsivity of 38.7 AW 1 and detectivity of 4.8×1013 Jones under 1100 nm light illumination at 5V bias. A fast response of 90 ms /86 ms illustrates the device's fast speed. An interface study between the PtS2-x and Ga2O3 was conducted using X-ray photoelectron spectroscopy and Ultraviolet photoelectron spectroscopy (UPS) which confirmed type-I band alignment. Finally, based on their band alignment study, a carrier transport mechanism was proposed at the interface. This work offers a new opportunity to fabricate large-area high-performance 2D-3D heterostructures based photodetectors for future optoelectronics devices.

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Section: Band Alignment Studymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

2D–3D heterostructure of PtS_2−x/Ga₂O₃ and their band alignment studies for high performance and broadband photodetector

Bassi,

Kaur,

Dahiya

et al. 2024

Nanotechnology

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“…There are some findings suggesting that amorphous Ga 2 O 3 (a-Ga 2 O 3 ) solar-blind photodetectors present a competitive device performance compared to those based on β-Ga 2 O 3 single crystals . In 2023, large-area MoS 2 /a-Ga 2 O 3 photodetectors were fabricated by Wadhwa et al, where ∼315-fold enhancement in responsivity (171 A/W) and external quantum efficiency (EQE, 2.4 × 10 4 %) compared to pristine MoS 2 photodetectors were reported . Meanwhile, a-Ga 2 O 3 exhibit fascinating advantages, including relatively low-temperature fabrication conditions, lattice-match-free substrates, low requirement of preparation equipment, and good flexibility, rendering them increasingly suitable for application as photodetectors. ,, Moreover, referring to previously reported band energy levels of various TMD materials , and the corresponding values of Ga 2 O 3 , , MoSe 2 /Ga 2 O 3 , WS 2 /Ga 2 O 3 , and WSe 2 /Ga 2 O 3 heterostructures may have type-II band alignments, which is beneficial for light harvesting and detecting and can be exploited for fabricating photodetectors and photovoltaic devices based on p–n junctions …”

Section: Introductionmentioning

confidence: 99%

Toward Broadband Photodetection: Band Alignment and Interlayer Charge Transfer in 2D Transition Metal Dichalcogenides/3D-Ga₂O₃ Hybrid-Dimensional Heterostructures

Zhu,

Liu,

Sheng

et al. 2024

ACS Appl. Mater. Interfaces

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Recently, various transition metal dichalcogenides (TMDs)/Ga 2 O 3 heterostructures have emerged as excellent candidates for the development of broadband photodetection, exhibiting various merits such as broadband optical absorption, efficient interlayer carrier transfer, a relatively simple fabrication process, and potential for flexibility. In this work, vertically stacked MoSe 2 /Ga 2 O 3 , WS 2 /Ga 2 O 3 , and WSe 2 /Ga 2 O 3 heterostructures were experimentally synthesized, all exhibiting broadband light absorption, spanning at least from 200 to 800 nm. The absorption coefficients of these TMDs/Ga 2 O 3 heterostructures are significantly improved compared to those of individual Ga 2 O 3 films. The superior performance can be attributed to the type-I band alignment and efficient interlayer carrier transfer, which result from various band offsets along with the different doping conditions of the TMD layers, leading to distinct photoluminescence (PL) emission properties. Through a detailed analysis of the excitation-power-dependent PL spectra, we offer an in-depth discussion of the interlayer carrier transfer mechanism in the TMDs/Ga 2 O 3 heterostructures. Regarding interlayer coupling effects, the shift of the E F of TMD layers plays a crucial role in modulating their trion emission properties. These findings suggest that these three TMDs/ Ga 2 O 3 heterostructures have great potential in broadband photodetection, and our in-depth physical mechanism analysis lays a solid foundation for a new device design.

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“…Integrating 1D structures with conducting polymers like polyaniline, polypyrrole, polythiophene, and so forth can further improve the already exceptional characteristics of the structures. The interface between inorganic semiconductors and conducting polymers is attributed to the superposition of many properties for enhancing photoabsorption and radiative reabsorption. , The electron–hole pair stimulated by incident photons can be verified by EQE, which is an essential element of energy devices …”

Section: Introductionmentioning

confidence: 99%

“…The interface between inorganic semiconductors and conducting polymers is attributed to the superposition of many properties for enhancing photoabsorption and radiative reabsorption. 8,9 The electron−hole pair stimulated by incident photons can be verified by EQE, which is an essential element of energy devices. 10 The population of mobile charges is transiently increased beyond the steady-state thermal background level in a highspeed photodetector under pulsed signal of light.…”

Section: Introductionmentioning

confidence: 99%

Photomultiplicative and High External Quantum Efficient Energy Conversion Device for Paper Electronics

Verma,

Chaudhary,

Singh

et al. 2023

ACS Appl. Electron. Mater.

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In this research, we present an innovative paper electronics device featuring Bi2S3 nanorods (NRs) seamlessly integrated into a chemically oxidized p-TSA-conjugated polyaniline matrix. This innovative combination aims to achieve remarkable external quantum efficiency for energy conversion. The incorporation of Bi2S3 nanorods into the polyaniline matrix facilitates the creation of interconnected microlevel junctions between these materials, all of which are assembled on a flexible and biodegradable cellulose paper substrate to form the device. As per XPS analysis, Bi 4f7/2 and Bi 4f5/2 levels were identified at binding energies of 156.88 and 161.98 eV, respectively, indicating the doublet splitting of Bi atom. Furthermore, the Tauc plot, derived from UV–visible absorption analysis, revealed that the optical band gap of Bi2S3-polyaniline stood at 2.64 eV. This metallopolymeric energy device shows a large photoresponsivity of 16.85 A/W with a sufficiently high external quantum efficiency (EQE) of 3.93 × 103% at an extremely low drift potential of 0.1 V and small optical power of 50 μW/cm2. Additionally, the device exhibits notable responsiveness under flexibility without the use of any binder in the device fabrication process. Capacitance measurements, trap depth energy, and trap density with respect to frequency were carried out to better substantiate the photoconduction phenomenon.

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Fast response and high-performance UV-C to NIR broadband photodetector based on MoS2/a-Ga2O3 heterostructures and impact of band-alignment and charge carrier dynamics

Cited by 10 publications

References 66 publications

2D–3D heterostructure of PtS_2−x/Ga₂O₃ and their band alignment studies for high performance and broadband photodetector

2D–3D heterostructure of PtS_2−x/Ga₂O₃ and their band alignment studies for high performance and broadband photodetector

Toward Broadband Photodetection: Band Alignment and Interlayer Charge Transfer in 2D Transition Metal Dichalcogenides/3D-Ga₂O₃ Hybrid-Dimensional Heterostructures

Photomultiplicative and High External Quantum Efficient Energy Conversion Device for Paper Electronics

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Fast response and high-performance UV-C to NIR broadband photodetector based on MoS2/a-Ga2O3 heterostructures and impact of band-alignment and charge carrier dynamics

Cited by 10 publications

References 66 publications

2D–3D heterostructure of PtS2−x /Ga2O3 and their band alignment studies for high performance and broadband photodetector

2D–3D heterostructure of PtS2−x /Ga2O3 and their band alignment studies for high performance and broadband photodetector

Toward Broadband Photodetection: Band Alignment and Interlayer Charge Transfer in 2D Transition Metal Dichalcogenides/3D-Ga2O3 Hybrid-Dimensional Heterostructures

Photomultiplicative and High External Quantum Efficient Energy Conversion Device for Paper Electronics

Contact Info

Product

Resources

About

2D–3D heterostructure of PtS_2−x/Ga₂O₃ and their band alignment studies for high performance and broadband photodetector

2D–3D heterostructure of PtS_2−x/Ga₂O₃ and their band alignment studies for high performance and broadband photodetector

Toward Broadband Photodetection: Band Alignment and Interlayer Charge Transfer in 2D Transition Metal Dichalcogenides/3D-Ga₂O₃ Hybrid-Dimensional Heterostructures