Fast response of CO2 room temperature gas sensor based on Mixed-Valence Phases in Molybdenum and Tungsten Oxide nanostructured thin films

Basyooni, Mohamed A.; Zaki, Shrouk E.; Ertugrul, Sezin; Yılmaz, Mücahit; Eker, Yasin Ramazan

doi:10.1016/j.ceramint.2019.12.259

Cited by 51 publications

(33 citation statements)

References 83 publications

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“…On the other hand, the Au-Pd front contact was built in the anti-reflection Mo 0.2 W 0.8 O 3 layer, in which the formed Schottky barrier height and width could be controlled by the current passing through the metal-semiconductor contact. Under dark conditions and as predicted by Basyooni et al, a non-linear I-V curve was obtained indicating that a good double-Schottky contact behavior was formed between the front Pd-Au contact and the film surface 34 . The position of asymmetric metal contacts can provide an integrated potential gradient assigned to the work function difference of asymmetric electrodes as previously stated for various applications, such as gas sensors 34 and photodetector 74 , which leads to enhanced device performance as reported here.…”

Section: Electric and Optoelectronic Properties This Section Discusssupporting

confidence: 77%

“…Under dark conditions and as predicted by Basyooni et al, a non-linear I-V curve was obtained indicating that a good double-Schottky contact behavior was formed between the front Pd-Au contact and the film surface 34 . The position of asymmetric metal contacts can provide an integrated potential gradient assigned to the work function difference of asymmetric electrodes as previously stated for various applications, such as gas sensors 34 and photodetector 74 , which leads to enhanced device performance as reported here. For instance, Casalino et al used an asymmetric Al-Si-Cu (metal-semiconductor-metal) structure-based Si photodetector 75 .…”

Section: Electric and Optoelectronic Properties This Section Discusssupporting

confidence: 77%

“…Then the samples were in-situ annealed at 400 °C for 2 h with 50 sccm Ar flow. A protective and anti-reflection thin layer of Mo 0.2 W 0.8 O 3 was deposited on the surface of VO 2 as optimized in our previous work 34 . High vacuum thermal evaporation system was used to deposit aluminum and gold-palladium that used as a back and front contacts, respectively.…”

Section: Methodsmentioning

confidence: 99%

“…Figure 1 b shows the band alignment of the optimized p–n–n–p-type structure with different Mo-O sputtering times to control the MoS 2 bandgap 33 . The nanostructured thin layer of Mo 0.2 W 0.8 O 3 was deposited on the surface of VO 2 as a protective and anti-reflection layer 34 . The optical anti-reflective layer (Mo 0.2 W 0.8 O 3 ) is used to improve the responsivity of the photodetector and strongly eliminate the optical interference to minimize its undesired effects.…”

Section: Introductionmentioning

confidence: 99%

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Efficient MoWO3/VO2/MoS2/Si UV Schottky photodetectors; MoS2 optimization and monoclinic VO2 surface modifications

Basyooni

Zaki

Shaban

et al. 2020

Sci Rep

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The distinctive properties of strongly correlated oxides provide a variety of possibilities for modulating the properties of 2D transition metal dichalcogenides semiconductors; which represent a new class of superior optical and optoelectronic interfacing semiconductors. We report a novel approach to scaling-up molybdenum disulfide (MoS2) by combining the techniques of chemical and physical vapor deposition (CVD and PVD) and interfacing with a thin layer of monoclinic VO2. MoWO3/VO2/MoS2 photodetectors were manufactured at different sputtering times by depositing molybdenum oxide layers using a PVD technique on p-type silicon substrates followed by a sulphurization process in the CVD chamber. The high quality and the excellent structural and absorption properties of MoWO3/VO2/MoS2/Si with MoS2 deposited for 60 s enables its use as an efficient UV photodetector. The electronically coupled monoclinic VO2 layer on MoS2/Si causes a redshift and intensive MoS2 Raman peaks. Interestingly, the incorporation of VO2 dramatically changes the ratio between A-exciton (ground state exciton) and trion photoluminescence intensities of VO2/(30 s)MoS2/Si from < 1 to > 1. By increasing the deposition time of MoS2 from 60 to 180 s, the relative intensity of the B-exciton/A-exciton increases, whereas the lowest ratio at deposition time of 60 s refers to the high quality and low defect densities of the VO2/(60 s)MoS2/Si structure. Both the VO2/(60 s)MoS2/Si trion and A-exciton peaks have higher intensities compared with (60 s) MoS2/Si structure. The MoWO3/VO2/(60 s)MoS2/Si photodetector displays the highest photocurrent gain of 1.6, 4.32 × 108 Jones detectivity, and ~ 1.0 × 1010 quantum efficiency at 365 nm. Moreover, the surface roughness and grains mapping are studied and a low semiconducting-metallic phase transition is observed at ~ 40 °C.

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Section: Electric and Optoelectronic Properties This Section Discusssupporting

confidence: 77%

Section: Electric and Optoelectronic Properties This Section Discusssupporting

confidence: 77%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Efficient MoWO3/VO2/MoS2/Si UV Schottky photodetectors; MoS2 optimization and monoclinic VO2 surface modifications

Basyooni

Zaki

Shaban

et al. 2020

Sci Rep

Self Cite

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“…For instance, controlling respiratory gases in hospitals is being a matter of life or death 3 , 4 . Greenhouse gases such as CO 2 and CH 4 are considered as very harmful gases, as they have the property of absorbing infrared radiation (IR) emitted from Earth's surface and reradiating it back to Earth's surface, thus trapping the heat in the Earth's atmosphere 5 , 6 . While O 2 is considered a strong oxidizer and vigorously accelerate combustion gas 5 .…”

Section: Introductionmentioning

confidence: 99%

Fano resonance based defected 1D phononic crystal for highly sensitive gas sensing applications

Zaki

Mehaney

Hassanein

et al. 2020

Sci Rep

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The defected acoustic band gap materials are promising a new generation of sensing technology based on layered cavities. We introduced a novel 1D defected phononic crystal (1D-DPC) as a high-sensitive gas sensor based on the Fano resonance transmitted window. Our designed (Lead–Epoxy) 1D-DPC multilayer has filled with a defect layer with different gases at different temperatures. In this study, Fano resonance—based acoustic band gap engineering has used to detect several gases such as O2, CO2, NH3, and CH4. For the first time, Fano resonance peaks appeared in the proposed gas sensor structures which attributed to high sensitivity, Q-factor, and figure-of-merit values for all gases. Also, the relation between the Fano resonance frequency and acoustic properties of gases at different temperatures has been studied in detail. The effect of the damping rate on the sensitivity of the gas sensor shows a linear behavior for CO2, O2, and NH3. Further, we introduced the effect of temperature on the damping rate of the incident waves inside the 1D-DPC gas sensor. The highest sensitivity and figure of merit were obtained for O2 of 292 MHz/(kg/m3) and 647 m3/Kg, respectively. While the highest figure-of-merit value of 60 °C−1 at 30 °C was attributed to O2. The transfer matrix method is used for calculating the transmission coefficient of the incident acoustic wave. We believe that the proposed sensor can be experimentally implemented.

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Optical, Optoelectronic, and Third‐Order Nonlinear Photonics of Ultrathin Molybdenum Oxide Film Deposited by Atomic Layer Deposition

Basyooni

Gündoğdu

Kılıç

et al. 2023

Physica Status Solidi (a)

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The atomic layer deposition (ALD) technique has attracted significant attention because it enables the control of film synthesis at the subnanometre scale. Herein, molybdenum oxide (MoO3) ultrathin films using the ALD system through Bis(t‐butylimido)bis(dimethylamino)molybdenum (VI) as a molybdenum (Mo) source are prepared. To understand the effect of deposition temperature, thin films are prepared at three different temperatures 100, 150, and 250 °C. The morphological and elemental properties are assessed using a field emission scanning electron microscope, scanning transmission electron microscopy, and energy‐dispersive X‐ray spectroscopy techniques. It is observed that the film thicknesses increase with the increase in the deposition temperature. It is found that the film growth at 150 °C is the most potential one for UV optoelectronic applications with high stability even under low applied bias voltages. Moreover, these films show interesting nonlinear optical behaviors as investigated with the z‐scan technique applying open and closed aperture methods. The calculated nonlinear optical parameters including nonlinear absorption coefficient (β), nonlinear refractive index (n 2), nonlinear refractive coefficient (γ), and third‐order nonlinear susceptibility (χ (3)) are 10−11 m W−1, 10−16 cm2 W−1, 10−11 cm2 W−1, and 10−11 esu, respectively.

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Fast response of CO2 room temperature gas sensor based on Mixed-Valence Phases in Molybdenum and Tungsten Oxide nanostructured thin films

Cited by 51 publications

References 83 publications

Efficient MoWO3/VO2/MoS2/Si UV Schottky photodetectors; MoS2 optimization and monoclinic VO2 surface modifications

Efficient MoWO3/VO2/MoS2/Si UV Schottky photodetectors; MoS2 optimization and monoclinic VO2 surface modifications

Fano resonance based defected 1D phononic crystal for highly sensitive gas sensing applications

Optical, Optoelectronic, and Third‐Order Nonlinear Photonics of Ultrathin Molybdenum Oxide Film Deposited by Atomic Layer Deposition

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