Fast response photodetector analysis based on NiO nanowire using a catalyst-free technique

Chanu, Laishram Thoibileima; Singh, Naorem Khelchand

doi:10.1007/s00339-022-06155-y

Cited by 12 publications

(2 citation statements)

References 57 publications

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“…The rise time (τ r ) associated with on/off light is approximately 140 ms, while the fall time (τ f ) is 21 ms, as shown in Figure S8. This photodynamic response persists for 500 s over 1000 on/off cycles, showcasing repetitive and stable light reactions [44].…”

Section: Photoresponsivity Characteristicsmentioning

confidence: 99%

Monolithic Integration of Semi-Transparent and Flexible Integrated Image Sensor Array with a-IGZO Thin-Film Transistors (TFTs) and p-i-n Hydrogenated Amorphous Silicon Photodiodes

Choi,

Seo,

Yoon

et al. 2023

Nanomaterials

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A novel approach to fabricating a transparent and flexible one-transistor–one-diode (1T-1D) image sensor array on a flexible colorless polyimide (CPI) film substrate is successfully demonstrated with laser lift-off (LLO) techniques. Leveraging transparent indium tin oxide (ITO) electrodes and amorphous indium gallium zinc oxide (a-IGZO) channel-based thin-film transistor (TFT) backplanes, vertically stacked p-i-n hydrogenated amorphous silicon (a-Si:H) photodiodes (PDs) utilizing a low-temperature (<90 °C) deposition process are integrated with a densely packed 14 × 14 pixel array. The low-temperature-processed a-Si:H photodiodes show reasonable performance with responsivity and detectivity for 31.43 mA/W and 3.0 × 1010 Jones (biased at −1 V) at a wavelength of 470 nm, respectively. The good mechanical durability and robustness of the flexible image sensor arrays enable them to be attached to a curved surface with bending radii of 20, 15, 10, and 5 mm and 1000 bending cycles, respectively. These studies show the significant promise of utilizing highly flexible and rollable active-matrix technology for the purpose of dynamically sensing optical signals in spatial applications.

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Section: Photoresponsivity Characteristicsmentioning

confidence: 99%

Monolithic Integration of Semi-Transparent and Flexible Integrated Image Sensor Array with a-IGZO Thin-Film Transistors (TFTs) and p-i-n Hydrogenated Amorphous Silicon Photodiodes

Choi,

Seo,

Yoon

et al. 2023

Nanomaterials

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“…1D self-powered devices using various techniques and materials, such as V 2 O 5 [7][8][9] and InN [10,11], are already reported. Among the commonly used metal oxide such as TiO 2 , ZnO, NiO 2 , Gd 2 O 3 , and Ga 2 O 3 [12][13][14][15][16][17] for the study of optoelectronics, tungsten oxide (WO 3 ) is a promising candidate for the construction of highperformance ultraviolet (UV) photodetectors due to its high bandgap with good chemical and physical properties [18]. Among the wide variety of photodetector structures reported, a metal semiconduction (MS) junction is widely used due to its ease of preparation.…”

Section: Introductionmentioning

confidence: 99%

GLAD Fabricated Self-Powered Photodetector Based on WO3 with SiO2 as Interfacial Layer

Alam,

Meitei,

Aldughaylibi

et al. 2023

International Journal of Energy Research

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Photodetectors based on one-dimensional structures have recently attracted great interest due to their high surface-to-volume ratio and light-trapping efficiency. In this study, a self-powered photodetector based on vertically aligned WO3 nanorod with SiO2 as an interfacial layer has been fabricated using glancing angle deposition. Scanning electron microscope (SEM) analysis confirms the successful growth of WO3 nanorod and SiO2 thin film with a thickness of ~125 nm and ~70 nm, respectively. The device’s optical properties were also analysed using UV-visible spectroscopy, which revealed a wide bandgap and an intense absorption peak in the ultraviolet region. The electrical analysis showed a nonlinear rectifying current-voltage behaviour with high photosensitivity. Additionally, the photodetector exhibits a fast response of 0.31 s rise time and 0.32 s fall time at 0 V. Moreover, the devices possess a high detectivity and a responsivity of 0.68 mA/W. Thus, the obtained finding reveals a potential candidate for self-powered photodetector application.

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Self-powered solar-blind UV photodetectors based on Zn:NiO/p-Si heterojunction devices

et al. 2023

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Fast response photodetector analysis based on NiO nanowire using a catalyst-free technique

Cited by 12 publications

References 57 publications

Monolithic Integration of Semi-Transparent and Flexible Integrated Image Sensor Array with a-IGZO Thin-Film Transistors (TFTs) and p-i-n Hydrogenated Amorphous Silicon Photodiodes

Monolithic Integration of Semi-Transparent and Flexible Integrated Image Sensor Array with a-IGZO Thin-Film Transistors (TFTs) and p-i-n Hydrogenated Amorphous Silicon Photodiodes

GLAD Fabricated Self-Powered Photodetector Based on WO3 with SiO2 as Interfacial Layer

Self-powered solar-blind UV photodetectors based on Zn:NiO/p-Si heterojunction devices

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