Fast reversible laser-induced crystallization of Sb-rich Zn-Sb-Se phase change material with excellent stability

Abstract

We present a new reversible phase-change medium Sb-rich Zn-Sb-Se film, which possesses a large difference in both optical and electrical constant. The doped-ZnSb, sub-formed Zn-Se, and exhausted Sb-Se3/2 co-influence the physical properties. Typically, there is ∼105 resistance ratio and ∼14% relative reflectivity change in Zn19Sb45.7Se35.3 film when switched by electricity or laser pulses between amorphous and crystalline states. The higher Tc (∼250°C), larger Ea (∼8.57eV), better 10-yr data retention (∼200.2°C), higher crystallization resistance (∼3 × 103Ω/□ at 300°C-annealled) and relative lower melting temperature (∼550.2°C) are exhibited in Zn19Sb45.7Se35.3 film. Importantly, a short crystalline time (∼80ns at 70mW) of the ideal Zn19Sb45.7Se35.3 film can be obtained without sacrificing room-temperature stability.

New Methods Versus Old Questions: Crystallization Kinetics of S, Se, and Te

“…In contrast, it does not encourage Se as the base material for phase-change application, but appropriate doping can enhance the thermal stability greatly. 46 It is highly desired that the crystallization in glass is controllable. Among three chalcogens, S glass possesses moderate crystal growth rate, that is, slightly lower than the typical metallic glass Cu 50 Zr 50 .…”

“…As depicted in Figure , the crystal growth rate in As 2 Se 3 is lower, and T rg is larger apparently when As is introduced into Se matrix. In contrast, it does not encourage Se as the base material for phase-change application, but appropriate doping can enhance the thermal stability greatly …”

Shortening Nucleation Time to Enable Ultrafast Phase Transition in Zn1Sb7Te12 Pseudo-Binary Alloy

“…It is found that the GST film exhibits the longest crystallization time at any laser power. For Zn 4 Sb 9 Se 7 pseudo-binary compound, crystallization starts only after applying the irradiation power above 30 mW, and the crystallization time is longer than that in any other Zn-based phase-change materials. The minimum crystallization time is determined to be 40, 10, 25, and 3 ns for Ge 2 Sb 2 Te 5 , Zn 3 Sb 5 Te 2 , Zn 5 Sb 12 Te 8 , and Zn 1 Sb 7 Te 12 alloys at 70 mW, respectively.…”

“…To understand detailed crystalline growth behaviors in the nanosecond time scale, we analyzed the PTE diagrams of GST (see ref ), Zn 4 Sb 9 Se 7 (see ref ), Zn 5 Sb 12 Te 8 (see ref ), and Zn 1 Sb 7 Te 12 (reported in Figure a here) by introducing the JMA plot at a laser power of 40 mW, which can be subtracted from the respective PTE diagrams. In this plot, n is the slope of the ln­( t ) versus ln­[−ln­(1 – χ­( t ))].…”

Thermal analysis of novel third-generation phase-change materials with zinc as a chemical modifier

“…[4][5][6][7][8][9][10] Particularly, the recent literature survey of the last decade reveals that zinc is one of the building elements of phase change materials (PCMs) for use in phase change optical memory. [11][12][13][14][15][16][17] These features compelled various research groups to utilize Zn as a modier for preparing multicomponent (binary and ternary) ChGs. [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] Mehta et al 18 compared the effective values of thermal diffusivity and corresponding thermal conductivity of binary Se 90 Zn 10 and Te 90 Zn 10 alloys and found that both parameters are lower for Se 90 Zn 10 alloy as compared to Te 90 Zn 10 alloy.…”