Fast Room-Temperature Phase Gate on a Single Nuclear Spin in Diamond

Sangtawesin, Sorawis; Brundage, T.O.; Petta, J. R.

doi:10.1103/physrevlett.113.020506

Cited by 14 publications

(18 citation statements)

References 29 publications

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“…We also verify via optically detected magnetic resonance (ODMR) that there are no nearby nuclear spins coupled to this NV. Photoluminescence (PL) from the NV center is collected using a high numerical aperture (NA=0.95) objective and directed towards single photon detectors using a combination of fiber and free space optics [14]. The DC magnetic field along the NV axis is controlled by the combination of a permanent magnet mounted on a threeaxis translation stage and electromagnets that are aligned perpendicular to the NV axis.…”

Section: Methodsmentioning

confidence: 99%

“…This faster rotation rate can be interpreted as an enhancement of the effective nuclear gyromagnetic ratio (g N,eff ) that results from hyperfine interactions with the NV electronic spin in the ground state. The enhancement factor of ∼20 is typically achieved at the excited state level anti-crossing (ESLAC), where the nuclear spin can be optically polarized [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

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Hyperfine-enhanced gyromagnetic ratio of a nuclear spin in diamond

et al. 2016

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The nuclear spin gyromagnetic ratio can be enhanced by hyperfine coupling to the electronic spin. Here we show wide tunability of this enhancement on a 15 N nuclear spin intrinsic to a single nitrogenvacancy center in diamond. We perform control of the nuclear spin near the ground state level anticrossing (GSLAC), where the enhancement of the gyromagnetic ratio from the ground state hyperfine coupling is maximized. We demonstrate a two order of magnitude enhancement of the effective nuclear gyromagnetic ratio compared to the value obtained at 500 G, a typical operating field that is suitable for nuclear spin polarization. Finally, we show that with strong enhancements, the nuclear spin ultimately suffers dephasing from the inhomogeneous broadening of the NMR transition frequency at the GSLAC.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Hyperfine-enhanced gyromagnetic ratio of a nuclear spin in diamond

et al. 2016

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“…ac . An analogous effect in nitrogen-vacancy defects in diamond was termed 'hyperfine-enhanced nuclear gyromagnetic ratio', and was characterized theoretically and experimentally [14][15][16][17][18]. For the P:Si system, a straightforward experimental proof of this hyperfine-assisted nuclear spin control could be obtained by extending the analysis presented in Fig.…”

Section: Introductionmentioning

confidence: 99%

Hyperfine-assisted fast electric control of dopant nuclear spins in semiconductors

2018

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Nuclear spins of dopant atoms in semiconductors are promising candidates as quantum bits, due to the long lifetime of their quantum states. Conventionally, coherent control of nuclear spins is done using ac magnetic fields. Using the example of a phosphorus atom in silicon, we theoretically demonstrate that hyperfine interaction can enhance the speed of magnetic control: the electron on the donor amplifies the ac magnetic field felt by the nuclear spin. Based on that result, we show that hyperfine interaction also provides a means to control the nuclear spin efficiently using an ac electric field, in the presence of intrinsic or artificial spin-orbit interaction. This electric control scheme is especially efficient and noise-resilient in a hybrid dot-donor system holding two electrons in the presence of an inhomogeneous magnetic field. The mechanisms proposed here could be used as building blocks in nuclear-spin-based electronic quantum information architectures.

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“…26 A 532 nm excitation laser is focused onto a diffraction-limited spot on the sample with a high numerical aperture objective lens and the resulting PL is measured with an avalanche photodiode operating in the single-photon counting regime. The PL of the NV centers, represented by the photon count rate, is dependent on the polarization of the excitation photons.…”

Section: 1824mentioning

confidence: 99%

Highly tunable formation of nitrogen-vacancy centers via ion implantation

Sangtawesin

Brundage

Atkins

et al. 2014

Applied Physics Letters

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We demonstrate highly-tunable formation of nitrogen-vacancy (NV) centers using 20 keV 15 N + ion implantation through arrays of high-resolution apertures fabricated with electron beam lithography. By varying the aperture diameters from 80 to 240 nm, as well as the average ion fluences from 5 × 10 10 to 2 × 10 11 ions/cm 2 , we can control the number of ions per aperture. We analyze the photoluminescence on multiple sites with different implantation parameters and obtain ion-to-NV conversion yields of 6 − 7 %, consistent across all ion fluences. The implanted NV centers have spin dephasing times T * 2 ∼ 3 µs, comparable to naturally occurring NV centers in high purity diamond with natural abundance 13 C. With this technique, we can deterministically control the population distribution of NV centers in each aperture, allowing for the study of single or coupled NV centers and their integration into photonic structures.Advances in quantum information processing (QIP) require the use of multiple qubits that are stable and easily addressable. The NV center in diamond stands out as a candidate for this application due to its spindependent fluorescence and long coherence time at room temperature.1-4 However, the feasibility of integrating naturally occurring NV centers into a large-scale QIP architecture is limited by their random locations in the diamond lattice. The technique of nitrogen ion implantation can overcome this obstacle by offering precise control of NV center locations, while maintaining the quality of the NV centers created. 4-11In order to achieve high accuracy placement of NV centers, techniques such as implantation through a scanning force microscope tip, focused-ion beam, and apertures in implantation masks have been developed. [10][11][12] In terms of ease of fabrication and scalability, one of the most versatile methods is implantation through lithographically defined apertures. 6,13In this Letter, we study the efficacy of this method by demonstrating highly-controllable NV implantations with different ion fluences across a wide range of aperture diameters. Within each ion fluence, aperture diameters vary from 80 to 240 nm. We characterize the implanted NV centers using photoluminescence (PL) data and autocorrelation measurements g (2) (τ ). 14 Together, these data allow us to determine the statistics of NV center formation. We observe a linear relationship between the mean number of NV centers per aperture and the aperture area, from which we extract implantation yields of 6 − 7%. These yields are consistent across all ion fluences and with previously reported values.6,13,15 Finally, we measure spin dephasing times T * 2 ∼ 3 µs, a value comparable to that of naturally occurring NV centers, thus demonstrating the capability to maintain high quality NV centers and fine-tune the NV population distribution at well-defined locations. 16,17We begin by selecting an electronic grade diamond (N < 5 ppb, natural abundance 13 C, Element Six) with (100) orientation and low background PL. Typically, no NV cente...

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Fast Room-Temperature Phase Gate on a Single Nuclear Spin in Diamond

Cited by 14 publications

References 29 publications

Hyperfine-enhanced gyromagnetic ratio of a nuclear spin in diamond

Hyperfine-enhanced gyromagnetic ratio of a nuclear spin in diamond

Hyperfine-assisted fast electric control of dopant nuclear spins in semiconductors

Highly tunable formation of nitrogen-vacancy centers via ion implantation

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