Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al

Abstract

P-i-n 4H-SiC⟨Al⟩ diode structures are fabricated by a new approach which is low temperature diffusion of aluminium (Al) in SiC using flow of vacancy defects from surface into volume of crystal. In conventional diffusion in SiC, the operating temperature is usually >2050 ∘ C while, in this approach, the diffusion temperature is between 1150 and 1300 ∘ C. As the conditions of formation of junction in this method essentially differ from conventional diffusion (low temperature and process of diffusion are accompanied by forming structure defects), it is interesting to identify the advantages and disadvantages of a new method of diffusion. Fabricated p-i-n structures have low breakdown voltage between 80 and 140 V (due to the influence of dislocations and micropipes) and are capable of operating at temperatures up to 300 ∘ C. Structure has fast switching time and duration of the reverse recovery current less than 10 ns. We believe that because of low diffusion temperature, the concentration of nitrogen related trapping levels is relatively low and as a result the fast switching time is observed in our samples. It has been shown that this low temperature diffusion technology can be used to fabricate -region and high resistive -region of SiC diode in single-step process.

Reaction–diffusion bonding of CVD SiC using CrAl thin coating layer

“…Danno et al reported that Cr atoms diffuse into 4H-SiC with a depth of approximately 3 μm after annealing at 1780 °C for 30 min [25]. Various studies have reported that Al atoms are easily diffused or dissolved into SiC at temperatures above 600 °C [26][27][28]. To use the CrAl coating as a joining interlayer of CVD SiC using the reaction-diffusion bonding method, the joining temperature was set to 1700 and 1800 °C.…”

Research of p‐i‐n Junctions Based on 4H‐SiC Fabricated by Low‐Temperature Diffusion of Boron

“…Diffusion of boron in 4H-SiC has been performed at different temperatures between 1150 and 1300°C by the novel low-temperature diffusion method described in [31][32][33][34][35][36][37][38][39]. Borosilicate thin film on the surface of SiC has been used as a source for boron atoms.…”

ВЛИЯНИЕ ИОНИЗОВАННЫХ ПРИМЕСЕЙ И МИКРОТРУБОК НА ВАХ p-n-4Н-SiC-ПЕРЕХОДА

“…Ранее в работах [6][7][8][9][10][11][12][13][14][15][16][17][18] исследован метод низкотемпературной диффузии мелких примесей в SiC, изготовлены p-n диодные структуры и изучены их электрофизические и оптические характеристики.…”