Fast thin film vanadium dioxide microwave switches

Sovero, E.A.; Deakin, D.S.; Higgins, J.A.; DeNatale, J.F.; Pittman, S.

doi:10.1109/gaas.1990.175460

Cited by 14 publications

(9 citation statements)

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“…devices is limited to several nanoseconds either due to the test structure or measurement setup limitations [5][6][7][8]. The demonstrated fastest switching speed (from electrical measurements) is ~5 ns for planar devices [5], and ~ 170 ns for out-of-plane devices [6].…”

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confidence: 99%

Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches

Zhou

Chen

et al. 2013

IEEE Electron Device Lett.

255

158

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Electrically driven metal-insulator transition in vanadium dioxide (VO 2 ) is of interest in emerging memory devices, neural computation, and high speed electronics. We report on the fabrication of out-of-plane VO 2 metal-insulator-metal (MIM) structures and reproducible high-speed switching measurements in these two-terminal devices. We have observed a clear correlation between electrically-driven ON/OFF current ratio and thermally-induced resistance change during metal-insulator transition. It is also found that sharp metal-insulator transition could be triggered by external voltage pulses within 2 ns at room temperature and the achieved ON/OFF ratio is greater than two orders of magnitude with good endurance.

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confidence: 99%

Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches

Zhou

Chen

et al. 2013

IEEE Electron Device Lett.

255

158

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“…We investigate the corresponding RF S-parameter properties up to 13.5 GHz and power handling capabilities for possible RF applications in high frequency filters, modulators, and active microwave device components. 3,5,[10][11][12][13][14][15][16] We show that high RF input power can reduce the resistance of VO 2 similarly as applied DC voltage. We compare transient and RF properties with published results on VO 2 and present lumped circuit element and 3D electromagnetic simulations that model the RF properties quite well.…”

Section: Introductionmentioning

confidence: 99%

Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices

Zhou

Fisher

et al. 2013

Journal of Applied Physics

103

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Vanadium dioxide is a correlated electron system that features a metal-insulator phase transition (MIT) above room temperature and is of interest in high speed switching devices. Here, we integrate VO 2 into two-terminal coplanar waveguides and demonstrate a large resistance modulation of the same magnitude (>10 3 ) in both electrically (i.e. by bias voltage, referred to as E-MIT) and thermally (T-MIT) driven transitions. We examine transient switching characteristics of the E-MIT and observe two distinguishable time scales for switching. We find an abrupt jump in conductivity with a rise time of the order of 10 ns followed by an oscillatory damping to steady state on the order of several μs. We characterize the RF power response in the On state and find that high RF input power drives VO 2 further into the metallic phase, indicating that electromagnetic radiation-switching of the phase transition may be possible. We measure Sparameter RF properties up to 13.5 GHz. Insertion loss is markedly flat at 2.95 dB across the frequency range in the On state and sufficient isolation of over 25 dB is observed in the Off state.We are able to simulate the RF response accurately using both lumped element and 3D electromagnetic models. Extrapolation of our results suggests that optimizing device geometry can reduce insertion loss further and maintain broadband flatness up to 40 GHz.2

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“…Vanadium dioxide-based RF devices get considerable attention only for a decade, although there are handful of work in early 1990s [56,57]. The first reported work on VO 2 based RF switches is done by Sovero et al [56]. They demonstrated VO 2 based RF switches on Si 3 N 4 /GaAs (Gallium arsenide) substrate triggered by on chip heater with 30 mW of power.…”

Section: Device Fabrication and Rf Characteristicsmentioning

confidence: 99%

Performance Comparison of Phase Change Materials and Metal-Insulator Transition Materials for Direct Current and Radio Frequency Switching Applications

2018

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Advanced understanding of the physics makes phase change materials (PCM) and metal-insulator transition (MIT) materials great candidates for direct current (DC) and radio frequency (RF) switching applications. In the literature, germanium telluride (GeTe), a PCM, and vanadium dioxide (VO 2), an MIT material have been widely investigated for DC and RF switching applications due to their remarkable contrast in their OFF/ON state resistivity values. In this review, innovations in design, fabrication, and characterization associated with these PCM and MIT material-based RF switches, have been highlighted and critically reviewed from the early stage to the most recent works. We initially report on the growth of PCM and MIT materials and then discuss their DC characteristics. Afterwards, novel design approaches and notable fabrication processes; utilized to improve switching performance; are discussed and reviewed. Finally, a brief vis-á-vis comparison of resistivity, insertion loss, isolation loss, power consumption, RF power handling capability, switching speed, and reliability is provided to compare their performance to radio frequency microelectromechanical systems (RF MEMS) switches; which helps to demonstrate the current state-of-the-art, as well as insight into their potential in future applications.

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Fast thin film vanadium dioxide microwave switches

Cited by 14 publications

References 0 publications

Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches

Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches

Electrical switching dynamics and broadband microwave characteristics of VO2 radio frequency devices

Performance Comparison of Phase Change Materials and Metal-Insulator Transition Materials for Direct Current and Radio Frequency Switching Applications

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