Faster SET Operation in Phase Change Memory with Initialization

Abstract

In conclusion, an initialization method has been introduced and studied to improve the SET speed in PCM. Before experiment verification, a two-dimensional finite analysis is used, and the results illustrate the proposed method is feasible to improve SET speed. Next, the R-I performances of the discrete PCM device and the resistance distributions of a 64 M bits PCM test chip with and without the initialization have been studied and analyzed, which confirms that the writing speed has been greatly improved. At the same time, the resistance distribution for the repeated initialization operations suggest that a large number of PCM cells have been successfully changed to be in an intermediate state, which is thought that only a shorter current pulse can make the cells SET successfully in this case. Compared the transmission electron microscope (TEM) images before and after initialization, it is found that there are some small grains appeared after initialization, which indicates that the nucleation process of GST has been carried out, and only needs to provide energy for grain growth later.