Fatigue and retention in ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O heterostructures

Ramesh, R.; Chan, W.K.; Wilkens, B.; Gilchrist, H. L.; Sands, T.; Tarascon, J. M.; Keramidas, V. G.; Fork, D. K.; Lee, J.; Safari, A.

doi:10.1063/1.107488

Cited by 364 publications

(78 citation statements)

References 19 publications

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“…[3][4][5] In particular, Pb(Zr 0.52 Ti 0.48 )O 3 with a low coercive field and high remnant polarization 6 has been widely investigated for application in microwave devices, 7 energy storage, and capacitance. 8 However, the common Pb loss induced a large number of oxygen vacancies, which locate typically at grain boundaries or/and at the interfaces between PZT and electrodes.…”

mentioning

confidence: 99%

Enhanced dielectric nonlinearity in epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 thin films

et al. 2014

Applied Physics Letters

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High quality c-axis oriented epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 films were fabricated using pulsed laser deposition on (001) LaAlO3 substrates with conductive LaNiO3 buffers. Besides confirmation of the in-plane and out-of-plane orientations using X-ray diffraction, transmission electron microscopy study has revealed columnar structure across the film thickness with column width around 100 nm. Characterization of ferroelectric properties was carried out in comparison with polycrystalline Pb0.92La0.08Zr0.52Ti0.48O3 films to extract the effect of epitaxial growth. It is found that the ratio between the irreversible Rayleigh parameter and reversible parameter increased up to 0.028 cm/kV at 1 kHz on epitaxial samples, which is more than twice of that on their polycrystalline counterparts. While this ratio decreased to 0.022 cm/kV with increasing frequency to100 kHz, a much less frequency dependence was observed as compared to the polycrystalline case. The epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 films exhibited a higher mobility of domain wall and the higher extrinsic contribution to the dielectric properties, as well as reduced density of defects, indicating that it is promising for tunable and low power consumption devices.

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confidence: 99%

Enhanced dielectric nonlinearity in epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 thin films

et al. 2014

Applied Physics Letters

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“…It has been reported that the PZT ferroelectric thin films with conducting YBCO oxide electrode yield better fatigue characteristics than those with Pt electrodes [8]. In this paper, the ferroelectric properties as well as the superconducting properties for the PZT/YBCO/MgO film are studied.…”

Section: Resultsmentioning

confidence: 99%

Diamond-like carbon film deposition on PZT ferroelectrics and YBCO superconducting films using KrF excimer laser deposition

Ebihara

Mitsugi

Yamazato

et al. 1999

Composites Part B: Engineering

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Ferroelectric PbZr 0.52 Ti 0.48 O 3 (PZT) and superconducting YBa 2 Cu 3 O 7Ϫx (YBCO) thin films were coated by unhydrogenated diamond-like carbon (DLC) films in order to reduce the aging degradation. Excimer laser ablation technique is applied to prepare PZT, YBCO and DLC films. The 60 days aging degradation of the DLC coated YBCO structure is limited within only 10% decay of normal resistivity. The polarization-electric field characteristics of the ferroelectric capacitor Au/PZT/YBCO/MgO shows a remanent polarization of 23.2 mC/cm 2 and a coercive field of 54.0 kV/cm. At least 10% decay of these ferroelectric values was observed after 60 days exposure to atmosphere. ᭧

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“…Several metal/metal oxide structures are being investigated to find a suitable electrode/diffusion barrier combination with low resistivity, good adhesion, excellent diffusion barrier properties, good thermal stability, and high chemical corrosion resistance. 1,[3][4][5][6] However, these electrode or electrode/barrier materials are reported to be stable up to 700°C which is lower than the commonly reported processing temperature of SBT ͑750-800°C͒ and, for that reason, fewer studies have been focused on the effects of electrode/diffusion barrier materials on the properties of SBT thin films for the realization of highdensity memories. 7 In this letter, we report on the properties of a low temperature processed 0.7SrBi 2 Ta 2 O 9 -0.3Bi 3 TaTiO 9 ͑0.7SBT-0.3BTT͒ solid-solution thin films fabricated directly on n ϩ -polycrystalline (n ϩ -poly͒ Si substrates with Pt-Rh ͑10% Rh͒ and Pt-Rh-O x as the electrode and diffusion barrier layers, respectively.…”

Section: ͓S0003-6951͑99͒01240-1͔mentioning

confidence: 99%

Low temperature processed 0.7SrBi2Ta2O9–0.3Bi3TaTiO9 thin films fabricated on multilayer electrode-barrier structure for high-density ferroelectric memories

Ryu

Joshi

Desu

1999

Applied Physics Letters

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Thin films of solid-solution material 0.7SrBi2Ta2O9–0.3Bi3TaTiO9 (0.7SBT–0.3BTT) were fabricated on n+-polycrystalline (n+-poly) Si substrates by a metalorganic solution deposition technique at a low processing temperature of 650 °C using a Pt–Rh/Pt–Rh–Ox electrode-barrier structure. The Pt–Rh/Pt–Rh–Ox structure was deposited using an in situ reactive radio frequency sputtering process. The electrodes had a smooth and fine-grained microstructure and were excellent diffusion barriers between the 0.7SBT–0.3BTT thin film and Si substrate. The ferroelectric (0.7SBT–0.3BTT) test capacitors using these electrode-barrier grown directly on Si showed good ferroelectric hysteresis properties, measured through n+-poly Si substrate, with 2Pr and Ec values of 11.5 μC/cm2 and 80 kV/cm, respectively, at an applied electric field of 200 kV/cm. The films exhibited good fatigue characteristics (<10% decay) under bipolar stressing up to 1011 switching cycles and the leakage current density was lower 10−7 A/cm2 at an applied electric field of 200 kV/cm. The good ferroelectric properties of 0.7SBT–0.3BTT solid-solution thin films at a low processing temperature of 650 °C and excellent electrode-diffusion barrier properties of a Pt–Rh/Pt–Rh–Ox structure are encouraging for the realization of high-density nonvolatile ferroelectric random access memories on silicon substrates.

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Fatigue and retention in ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O heterostructures

Cited by 364 publications

References 19 publications

Enhanced dielectric nonlinearity in epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 thin films

Enhanced dielectric nonlinearity in epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 thin films

Diamond-like carbon film deposition on PZT ferroelectrics and YBCO superconducting films using KrF excimer laser deposition

Low temperature processed 0.7SrBi2Ta2O9–0.3Bi3TaTiO9 thin films fabricated on multilayer electrode-barrier structure for high-density ferroelectric memories

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