Fatigue evaluation of power devices

Shinohara, Kazunori; Yu, Qiang

doi:10.1109/icept.2009.5270605

Cited by 6 publications

(3 citation statements)

References 15 publications

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“…Fatigue and aging of solder materials can be caused by its special multilayer structure as well as the mismatching of thermal expansion coefficient among different materials. This can lead to failure of the device as a result of rupture of chip bong wires, breakage in solder layers or an increase in temperature [3][4][5].…”

Section: Igbt Structure Modulementioning

confidence: 99%

Analysis of Transient Thermal Stress of IGBT Module Based on Electrical-Thermal-Mechanical Coupling Model

Zheng

Chen

Gao

et al. 2014

AMR

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Reliability of IGBT power module is one of the biggest concerns regarding wind power system, which generates the non-uniform distribution of temperature and thermal stress. The effects of non-uniform distribution will cause failure of IGBT module. Therefore, analysis of thermal mechanical stress distribution is crucially important for investigation of IGBT failure mechanism. This paper uses FEM method to establish an electrical-thermal mechanical coupling model of IGBT power module. Firstly, thermal stress distribution of solder layer is studied under power cycling. Then, the effects of initial failure of solder layer on the characteristic of IGBT module is investigated. Experimental results indicate that the strain energy density and inelastic strain are higher which will reduce reliability and lifetime of power modules.

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Section: Igbt Structure Modulementioning

confidence: 99%

Analysis of Transient Thermal Stress of IGBT Module Based on Electrical-Thermal-Mechanical Coupling Model

Zheng

Chen

Gao

et al. 2014

AMR

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“…The thermal fatigue reliability of power devices has also been described [4]- [15]. In this paper, a multiphysics algorithm ( coupled thermalelectrical and thermal-structural analyses ) is presented to evaluate the fatigue behavior of these devices [16]. Then, crack propagation in a device is evaluated.…”

Section: Introductionmentioning

confidence: 99%

Reliability evaluation of power semiconductor devices using coupled analysis simulation

Shinohara

2010

2010 12th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems

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There is an increasing need to fabricate power devices that are lightweight and compact. However, reducing the weight of power devices would result in reduced stiffness, and greater compactness would result in increased current density, which, in turn, would increase the temperature of the device and cause deterioration. Thus, to realize lightweight, compact power devices with sufficient reliability, multiphysics fatigue analysis techniques that simultaneously consider electricity, heat, and stress should be developed. In the present paper, to accurately predict the fatigue properties of power devices, evaluation techniques based on multiphysics analysis are proposed. By using a multiphysics algorithm and comparing lead frame bonding to wire bonding found in literature, the reliability of lead frame bonding is estimated.

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“…In this study, a method of evaluating fatigue based on the power cycle is presented, using a combination of electrical and heat stress analysis [13]. The discretization procedure is based on the finite element method [14].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Fatigue Life of Semiconductor Power Device by Power Cycle Test and Thermal Cycle Test Using Finite Element Analysis

Shinohara¹,

Yu²

2010

ENG

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To accurately predict the fatigue life of a power device, a fatigue life evaluation method that is based on the power cycle is presented in terms of an algorithm based on a combination of electrical analysis, heat analysis, and stress analysis. In literature, the fatigue life of power devices has been evaluated on the basis of the thermal cycle. This cycle is alternately repeated within a range from a high temperature to a low temperature. In an actual operating environment, however, a power device works in a power cycle that consists of being switched ON and OFF. To accurately predict the fatigue life cycle of a device, then, the evaluation should take account of this important aspect of the power cycle. To verify the utility of the evaluation method presented in this study, the results for a power cycle based on the combined use of electrical analysis, heat analysis, and stress analysis are compared to the results based on the thermal cycle, as found in the literature. Our conclusion is that the fatigue life cycle as estimated by the thermal cycle test is higher than that estimated by the power cycle

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Fatigue evaluation of power devices

Cited by 6 publications

References 15 publications

Analysis of Transient Thermal Stress of IGBT Module Based on Electrical-Thermal-Mechanical Coupling Model

Analysis of Transient Thermal Stress of IGBT Module Based on Electrical-Thermal-Mechanical Coupling Model

Reliability evaluation of power semiconductor devices using coupled analysis simulation

Evaluation of Fatigue Life of Semiconductor Power Device by Power Cycle Test and Thermal Cycle Test Using Finite Element Analysis

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