Fault Characteristics of Schottky Barrier Diode used as Bypass Diode in Photovoltaic Module against Repetitive Surges

Hamada, Toshiyuki; Nakamoto, Kenta; Nanno, Ikuo; Ishikura, Norio; Oke, Shinichiro; Fujii, Masayuki

doi:10.1109/pvsc45281.2020.9301020

Cited by 1 publication

(3 citation statements)

References 5 publications

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“…Hamada et al . [11] also reported that the slope of the I ‐ V curve increased with the number of lightning surge applications.…”

Section: Discussionmentioning

confidence: 99%

“…In contrast to the i D -v D characteristics, Swe et al [10] reported that the I -V characteristics measured at the same time gradually transitioned toward the short-circuit mode with the number of SLIV applications. Hamada et al [11] also reported that the slope of the I -V curve increased with the number of lightning surge applications.…”

Section: Repetitive Applications Of Slivmentioning

confidence: 92%

“…The lightning surge causes BPD failures not only in short circuit and in open circuit [4], but also in a non‐perfect short circuit with a nonlinear resistance [9]. The effects of repetitive exposure to artificial lightning surges on the I ‐ V characteristics and fault resistances were also reported [10,11].…”

Section: Introductionmentioning

confidence: 99%

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Voltage and Current Characteristics of Schottky Barrier Diodes and Rectifier Diodes Exposed to Standard Lightning Impulse Voltage

Ko,

Torihara,

Sakoda

et al. 2024

IEEJ Transactions Elec Engng

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Lightning surges are one of the major reasons of bypass diode (BPD) failure in photovoltaic modules. In this study, standard lightning impulse voltages (SLIVs) were directly applied to Schottky barrier diodes (SKB diodes) and rectifier diodes (PNJ diodes) with different electrical specifications. The critical voltages Vc of SLIV at which the diodes were damaged and the temporal variations of diode current (iD) and voltage (vD) were measured. It was found the iD‐vD characteristics can be categorized into a total of eight patterns: four patterns for the forward SLIV application and the four for the reverse SLIV application, regardless of diode types. The measured results imply that the irreversible voltage dip that occurs before the termination of the reverse breakdown contributes significantly to diode damage in the both forward and reverse SLIV applications. SKB diodes exposed to the reverse SLIV are easily damaged at the lowest magnitude of SLIV among all combinations of diode types and SLIV directions. Once a diode has been damaged due to the first SLIV application, the second application of SLIV to the same diode causes remarkable change in the iD‐vD characteristic even if the magnitude of the second SLIV is smaller than Vc. © 2024 Institute of Electrical Engineers of Japan. Published by Wiley Periodicals LLC.

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“…Hamada et al . [11] also reported that the slope of the I ‐ V curve increased with the number of lightning surge applications.…”

Section: Discussionmentioning

confidence: 99%

Section: Repetitive Applications Of Slivmentioning

confidence: 92%

See 1 more Smart Citation

Voltage and Current Characteristics of Schottky Barrier Diodes and Rectifier Diodes Exposed to Standard Lightning Impulse Voltage

Ko,

Torihara,

Sakoda

et al. 2024

IEEJ Transactions Elec Engng

View full text Add to dashboard Cite

show abstract

Fault Characteristics of Schottky Barrier Diode used as Bypass Diode in Photovoltaic Module against Repetitive Surges

Cited by 1 publication

References 5 publications

Voltage and Current Characteristics of Schottky Barrier Diodes and Rectifier Diodes Exposed to Standard Lightning Impulse Voltage

Voltage and Current Characteristics of Schottky Barrier Diodes and Rectifier Diodes Exposed to Standard Lightning Impulse Voltage

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