Fe-functionalized zigzag GaN nanoribbon for nanoscale spintronic/interconnect applications

Jatkar, Mandar; Patra, Sarat Kumar

doi:10.1007/s00339-021-04536-3

Cited by 7 publications

(2 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A similar phenomenon is previously reported in silicene nanoribbons (SiNRs) with asymmetric edges [17]. Also, other 2D materials such as zigzag arsenene nanoribbons (zAsNRs) and gallium nitride nanoribbons (GaNNRs) are reported for the nanointerconnects design [18], [19].…”

supporting

confidence: 81%

Copper Passivated Zigzag MgO Nanoribbons for Potential Nanointerconnect Applications

Krishna

Singh

Kaushik

2022

IEEE Open J. Nanotechnol.

View full text Add to dashboard Cite

The present work explores the theoretical analysis of copper passivated MgONRs (Cu-MgO-Cu) for possible nanointerconnect applications. The first principles calculations based on density functional theory (DFT) and non-equilibrium Green's function are employed for theoretical investigation. Pristine MgONRs (H-MgO-H) and Cu-MgO-Cu are both thermodynamically stable and are metallic with H-MgO-H being relatively more stable. Further, the I-V characteristics evaluated using the two-probe method reveal the ohmic behavior of Cu-MgO-Cu. The Cu-MgO-Cu device is further investigated for the nanointerconnect applications. The computed nanoscale parasitic components such as quantum resistance (R Q ), quantum capacitance (C Q ), and kinetic inductance (L K ) are computed to be 6.46 kΩ, 5.57 fF/µm, and 58.17 nF/µm, respectively. Furthermore, the delay and power delay product (PDP) of the nanointerconnect are explored which are important attributes of nanointerconnects. The findings suggest the Cu-MgO-Cu nanoribbons with low parasitic parameters can potentially be employed for nanointerconnect applications.

show abstract

supporting

confidence: 81%

Copper Passivated Zigzag MgO Nanoribbons for Potential Nanointerconnect Applications

Krishna

Singh

Kaushik

2022

IEEE Open J. Nanotechnol.

View full text Add to dashboard Cite

show abstract

“…Khan et al [19] performed a density functional theory (DFT) study of C, Ti co-doped GaN and the results showed that the doped structures will be more conducive to the application of UV optoelectronics, power electronics and UV solar cells. Jatkar et al [20] investigated the Fe-doped zigzag GaN nanoribbons using the DFT approach and found that the substitutional Fe passivation provides a stable bonding compared to the pristine configuration, which is a strong candidate for magnetic stabilization.…”

Section: Introductionmentioning

confidence: 99%

Theoretical study of potential n-type and p-type dopants in GaN from data mining and first-principles calculation

Zhao¹,

Xue²,

Zhao³

et al. 2022

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Impurity doping is one of the important means to control the physical properties of intrinsic semiconductors. By combining data mining and first principles calculation, a series of potential dopable elements in GaN were predicted by Shannon radius and probability model methods in this study. The Shannon radius difference and replacement probability were used as the criterion to screen the dopable elements and a total of 36 dopants were predicted. Then the structural stability and electronic structure of these doped structures were systematically studied by the first principles calculations. Among these dopants, the defect formation energy of 14 kinds is less than 3 eV, namely ON, ZrGa, TiGa, SiGa, FN, GeGa, NbGa, SN, SeN for n-type and BeGa, MgGa, CaGa, ZnGa and MnGa for p-type. In these potential doping systems, the changes of electronic structure can be divided into two types according to whether the impurity energy level is introduced or not. The doping of TiGa, NbGa, FN and MnGa can introduce significant impurity levels in the band gap, the electrons of which are directly involved in the carrier transition. For other dopants, no obvious impurity energy level is introduced in the band gap. Compared with the undoped GaN, the electronic density of states of the doped systems are significantly enhanced at the conduction band minimum. These results are expected to provide an effective theoretical reference for the experimental screening of appropriate GaN dopants

show abstract

First principles investigation on zigzag nanoribbons of X-Nitrides (X=B,Al,Ga) for hydrogen cyanide gas sensor

Rai,

Jha

2024

Computational and Theoretical Chemistry

View full text Add to dashboard Cite

Fe-functionalized zigzag GaN nanoribbon for nanoscale spintronic/interconnect applications

Cited by 7 publications

References 36 publications

Copper Passivated Zigzag MgO Nanoribbons for Potential Nanointerconnect Applications

Copper Passivated Zigzag MgO Nanoribbons for Potential Nanointerconnect Applications

Theoretical study of potential n-type and p-type dopants in GaN from data mining and first-principles calculation

First principles investigation on zigzag nanoribbons of X-Nitrides (X=B,Al,Ga) for hydrogen cyanide gas sensor

Contact Info

Product

Resources

About