2014
DOI: 10.1007/s00339-014-8491-3
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Feasibility on a piezoresistive tactile normal force sensor array

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Cited by 6 publications
(2 citation statements)
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“…Compared to two-terminal resistors, four-terminal devices have proved to be more thermally stable and suitable for the miniaturization of sensors, since they do not require any external Wheatstone bridge [17][18][19][20][21] . Under a mechanical shear strain, a voltage is generated across two terminals of four-terminal devices due to the distortion of potential distribution, and this phenomenon has been named as the pseudo-Hall effect 22,23 . To date, there have been various studies on the pseudo-Hall effect in silicon material, and in fact this effect in Si has been utilized in commercial strain sensors for more than two decades 23,24 .…”
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confidence: 99%
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“…Compared to two-terminal resistors, four-terminal devices have proved to be more thermally stable and suitable for the miniaturization of sensors, since they do not require any external Wheatstone bridge [17][18][19][20][21] . Under a mechanical shear strain, a voltage is generated across two terminals of four-terminal devices due to the distortion of potential distribution, and this phenomenon has been named as the pseudo-Hall effect 22,23 . To date, there have been various studies on the pseudo-Hall effect in silicon material, and in fact this effect in Si has been utilized in commercial strain sensors for more than two decades 23,24 .…”
mentioning
confidence: 99%
“…[17][18][19][20][21] Under a mechanical shear strain, a voltage is generated across two terminals of four-terminal devices due to the distortion of potential distribution, and this phenomenon has been named as the pseudo-Hall effect. 22,23 To date, there have been various studies on the pseudo-Hall effect in silicon material, and in fact this effect in Si has been utilized in commercial strain sensors for more than two decades. 23,24 However, the work on the pseudo-Hall effect in SiC has been rarely reported.…”
mentioning
confidence: 99%