Abstract:The lithography process on topographic substrate is one of the most critical issues for device manufacturing. Topographic substrate-induced focus variation occurs between top position and bottom position in a layer. That is, common depth of focus is reduced. This focus variation is sure to ruin the focus budget in low k1 lithography. From the focus budget of CMOS device (1) , substrate topography is required to be less than 30nm for hp 45-nm generation devices and less than 15nm for hp 32-nm generation devices… Show more
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