A fully differential CMOS ultrawideband low-noise amplifier (LNA) is presented. The LNA has been realized in a standard 90-nm CMOS technology and consists of a common-gate stage and two subsequent common-source stages. The commongate input stage realizes a wideband input impedance matching to the source impedance of the receiver (i.e., the antenna), whereas the two subsequent common-source stages provide a wideband gain by exploiting RLC tanks. The measurements have exhibited a transducer gain of 22.7 dB at 5.2 GHz, a 4.9-GHz-wide B 3dB , an input reflection coefficient lower than −10.5 dB, and an inputreferred 1-dB compression point of −19.7 dBm, which are in excellent agreement with the postlayout simulation results, confirming the approach validity and the design robustness.Index Terms-Complementary metal-oxide-semiconductor (CMOS), low-noise amplifier (LNA), radio-frequency integrated circuit (RFIC), ultrawideband (UWB), wireless body area network (WBAN).