Indium nitride (InN)-based nanostructures
have attracted substantial
interest in the development of next-generation nanostructured optoelectronic
devices. By expanding the light absorption range, the concept of heterostructures
is of paramount significance in optoelectronics. Herein, we report
a self-powered photodetector using In2O3/InN
core–shell nanorods (NRs). InN NRs were grown using molecular
beam epitaxy, and a radial In2O3/InN core–shell
NR heterojunction with an In2O3 polycrystalline
sheath layer was fabricated using hydrogen plasma treatment. The temperature-dependent
current–voltage characteristics exhibit nonideal behavior,
and the interface states cause deviation in barrier heights (BHs).
The calculated BHs for InN and In2O3/InN core–shell
heterostructure are estimated to be 0.47 and 0.62 eV, respectively.
The In2O3/InN core–shell heterostructure
achieved the highest photosensitivity and detectivity values of 3.22
A/W and 1.07 × 1011 Jones under λ = 465 nm (0.64
mW/cm2), respectively, in the self-power mode. This figure
of merit is retained in 382–465 nm spectral regions. The maximum
responsivity noticed at 465 nm is believed to be the intermediate
oxygen defect energy levels within the forbidden gap of In2O3. The high performance was also attributed to the passivation
of the InN NR surfaces by In2O3. The study would
be beneficial for the development of solar-blind photodetectors.