Features and Prospects for Epitaxial Graphene on SiC

Norimatsu, Wataru; Terasawa, Tomo‐o; Matsuda, Keisuke; Bao, Jianfeng; Kusunoki, Michiko

doi:10.1002/9781119468455.ch6

Cited by 3 publications

(14 citation statements)

References 359 publications

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“…Te same graphene growth from the lower surface joins with the graphene produced at the step (Figures 12(e) and 12(f )). Te frst carbon layer is a bufer layer which is then followed by a layer of graphene (Figures 12(h) and 12(g)) [57].…”

Section: Silicon Carbide Sublimation (Epitaxial Growth)mentioning

confidence: 99%

“…Te diference between the graphene growth on the silicon-face (0001) and the carbon-face (0001) is that the graphene layers formed on the (0001) surface are stacked in a disorderly manner (turbostratic), while on the (0001) surface, the graphene showed ABC stacking. Graphene from carbon-face (0001) SiC also has high charge-carrier mobility, weaker coupling to the SiC surface and greater defects (Figure 13(f )) than graphene from silicon-face (0001) [57].…”

Section: Silicon Carbide Sublimation (Epitaxial Growth)mentioning

confidence: 99%

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State-of-the-Art Graphene Synthesis Methods and Environmental Concerns

Edward

Mamun

Narayan

et al. 2023

Applied and Environmental Soil Science

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Graphene, a 2D sp2 hybridized carbon sheet consisting of a honeycomb network, is the building block of graphite. Since its discovery in 2004, graphene’s exceptional electronic and mechanical properties have peaked interest in various applications. However, the inability to mass produce high-quality graphene affordably currently limits the practical application of the material. Researchers are continuously working on advancing graphene synthesis methods to alleviate these limitations. Therefore, this review looks at the overview of established graphene synthesis methods and characterization techniques, and then highlights an in-depth review of graphene production through flash joule heating. The environmental concerns related to graphene synthesis are also presented in this review paper.

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Section: Silicon Carbide Sublimation (Epitaxial Growth)mentioning

confidence: 99%

Section: Silicon Carbide Sublimation (Epitaxial Growth)mentioning

confidence: 99%

State-of-the-Art Graphene Synthesis Methods and Environmental Concerns

Edward

Mamun

Narayan

et al. 2023

Applied and Environmental Soil Science

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“…Figure 2 shows the results of the Hall effect measurements on a typical epigraphene sample [15,30]. In Figure 2a, the temperature dependence of sheet resistance is shown.…”

Section: Basics Of the Mobility Of Epigraphenementioning

confidence: 99%

“…In 2008, it was reported that wafer-scale, large-area epigraphene growth is possible when SiC single crystals are heated in an atmospheric pressure of Ar [21,22]. Many review papers and books have been published regarding the growth, structure, and properties of epigraphene [23][24][25][26][27][28][29][30]. Now, a technique for the growth of wafer-scale single-oriented epigraphene on an insulating substrate has been established.…”

Section: Introductionmentioning

confidence: 99%

A Review on Carrier Mobilities of Epitaxial Graphene on Silicon Carbide

Norimatsu

2023

Materials

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Graphene growth by thermal decomposition of silicon carbide (SiC) is a technique that produces wafer-scale, single-orientation graphene on an insulating substrate. It is often referred to as epigraphene, and has been thought to be suitable for electronics applications. In particular, high-frequency devices for communication technology or large quantum Hall plateau for metrology applications using epigraphene are expected, which require high carrier mobility. However, the carrier mobility of as-grown epigraphene exhibit the relatively low values of about 1000 cm2/Vs. Fortunately, we can hope to improve this situation by controlling the electronic state of epigraphene by modifying the surface and interface structures. In this paper, the mobility of epigraphene and the factors that govern it will be described, followed by a discussion of attempts that have been made to improve mobility in this field. These understandings are of great importance for next-generation high-speed electronics using graphene.

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“…1,2) In fact, the intrinsic carrier mobility of suspended exfoliated graphene reportedly amounts to 100 000 cm 2 V −1 s −1 . 7,8) However, the Hall mobility of epitaxial graphene that is formed on SiC substrate using a thermal sublimation method is around 10 000 cm 2 V −1 s −1 , 9,10) the value of which is an order of magnitude smaller than that of its intrinsic carrier mobility. Moreover, the fieldeffect mobility extracted from the current modulation characteristic of GFET stays in the order of several thousand cm 2 V −1 s −1 .…”

Section: Introductionmentioning

confidence: 99%

An investigation to determine the interface condition between graphene and aluminum oxide

Tateno

Mitsuhashi

Adachi

et al. 2020

Jpn. J. Appl. Phys.

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The interface condition between the graphene channel and aluminum oxide (Al2O3) gate insulator in a graphene field-effect transistor (FET) has been analyzed. The hard X-ray photoelectron spectroscopy technique was employed to analyze the interface. In the obtained C1s spectra, a small peak was found at 284.2 eV, which was considered to be derived from a covalent bond between the graphene and Al2O3. In the pulsed S-parameters measurements, it was found that the direction of the Dirac voltage shift matched the polarity of the applied voltage stress. The Dirac voltage shift demonstrated that there were electron traps at the interface, degrading the FET performance such as the cutoff frequency. It was concluded that the unexpected bond at the interface formed electron traps whose energy level located near the conduction band minimum and that the Dirac voltage shifted in accordance with carrier capturing or emitting by the traps.

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Features and Prospects for Epitaxial Graphene on SiC

Cited by 3 publications

References 359 publications

State-of-the-Art Graphene Synthesis Methods and Environmental Concerns

State-of-the-Art Graphene Synthesis Methods and Environmental Concerns

A Review on Carrier Mobilities of Epitaxial Graphene on Silicon Carbide

An investigation to determine the interface condition between graphene and aluminum oxide

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