Features Multilevel Metallization Forming a Submicron Structures of Large Integrated Circuits

Abstract

This paper analyzesaluminum alloys that are used to form multilevel metallization in the submicron LSI/VLSI and magnetic alloys that are used for the production of magnetic disks of external storage devices with a large amount of memory. In addition characteristics of magnetron sputtering devices that can be used to form thinmetallization are given: magnetron sputtering device with a magnetic block rotated by cooling deionized water, which can significantly increase the effectiveness of sputtering; high-frequency magnetron device UMV 2,5 with magnetic system that formed on electromagnets with scanning magnetic field; magnetron sputtering device UVN MDE.P-1250-012 which can be used to form double-sided metallization; magnetron sputtering device based on URM.3.279.05 which can be used to form multilayer contact metallization.