Features of arsenic clusters in silicon

Nobili, D.; Solmi, S.

doi:10.1002/pssc.200461723

Cited by 3 publications

(4 citation statements)

References 18 publications

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“…It is worth mentioning that if As concentration is higher than the solubility limit, the electrical properties of the heavily As-doped Si deteriorates due to the occurrence of electrically inactive arsenic clusters [ 125 , 132 , 133 ]. The electrically inactive cluster contains two As atoms and one vacancy position [ 125 , 134 ]. Furthermore, these clusters result in obstructing the phase equilibrium between Si and the AsSi compound by blocking the nucleation of AsSi precipitates.…”

Section: Phase Diagramsmentioning

confidence: 99%

See 1 more Smart Citation

Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

Mostafa

Medraj

2017

Materials

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Fabrication of solar and electronic silicon wafers involves direct contact between solid, liquid and gas phases at near equilibrium conditions. Understanding of the phase diagrams and thermochemical properties of the Si-dopant binary systems is essential for providing processing conditions and for understanding the phase formation and transformation. In this work, ten Si-based binary phase diagrams, including Si with group IIIA elements (Al, B, Ga, In and Tl) and with group VA elements (As, Bi, N, P and Sb), have been reviewed. Each of these systems has been critically discussed on both aspects of phase diagram and thermodynamic properties. The available experimental data and thermodynamic parameters in the literature have been summarized and assessed thoroughly to provide consistent understanding of each system. Some systems were re-calculated to obtain a combination of the best evaluated phase diagram and a set of optimized thermodynamic parameters. As doping levels of solar and electronic silicon are of high technological importance, diffusion data has been presented to serve as a useful reference on the properties, behavior and quantities of metal impurities in silicon. This paper is meant to bridge the theoretical understanding of phase diagrams with the research and development of solar-grade silicon production, relying on the available information in the literature and our own analysis.

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Section: Phase Diagramsmentioning

confidence: 99%

“…Hence, it is of great importance to determine the maximum solubility of As in Si precisely. Nobili and Slomi [ 134 ] described the maximum As concentration, C sat , in Si lattice at equilibrium with AsSi by

based on the best fit equation given in Nobili’s earlier work [ 128 ] in the 800–1050 °C temperature range.…”

Section: Phase Diagramsmentioning

confidence: 99%

Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

Mostafa

Medraj

2017

Materials

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“…Various arsenic‐vacancy clusters as well as SiAs aggregates or precipitates were observed that contribute to the deactivation of arsenic. Even now, they are subjects of numerous experimental studies and first‐principles calculations 14–18. In spite of the large amount of scientific literature, the SiAs system is still not completely understood.…”

Section: Introductionmentioning

confidence: 99%

Phonons in SiAs: Raman scattering study and DFT calculations

Kutzner

Kortus

Pätzold

et al. 2011

J Raman Spectroscopy

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We present experimental Raman scattering results on single-crystal silicon monoarsenide (SiAs). Based on a comparison between Raman measurements and first-principles density functional theory calculations, we found evidence that SiAs will occur in a monoclinic crystal structure rather than an orthorhombic one as has been discussed in the literature. Further, we provide a detailed discussion of the vibrational properties of the monoclinic structure

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“…Yet by increasing the dopant concentration the dopant becomes electrically inactive to some extent. Studies of the electrically inactive dopants in heavily doped Si are mainly done with wafers where the dopant is either thermally diffused into the wafer or doping takes place through ion implantation and a thermal treatment afterwards [1][2][3]. Clearly, the electrically inactive fraction of the dopant is influenced by the thermal history.…”

Section: Introductionmentioning

confidence: 99%

Electrically Inactive Dopants in Heavily Doped As-Grown Czochralski Silicon

Stockmeier

Elsayed²,

Krause‐Rehberg³

et al. 2015

SSP

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To determine the electrically inactive fraction of As or P in heavily doped as-grown Czochralski Si 4-point resistivity and SIMS measurements were carried out. No clear trend for the electrical inactive fraction was found with an increasing dopant concentration, though a mean electrical inactive fraction of 11.5% for As doping could be determined.Experimental results on a dopant-vacancy complex in as-grown Si are scarce, hence temperature-dependent positron annihilation lifetime spectroscopy (PALS) was carried out on several heavily As and P doped as-grown Si samples. The measured average positron annihilation lifetime τav is between 218 ps and 220 ps. No temperature dependent effect on τav could be observed. Therefore, it can be concluded that in the studied doping range the dopant-vacancy complexes do not exist. The reason for the inactivation of the dopant has to be found elsewhere. A possible explanation can be the formation of dopant precipitates.

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Features of arsenic clusters in silicon

Cited by 3 publications

References 18 publications

Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

Phonons in SiAs: Raman scattering study and DFT calculations

Electrically Inactive Dopants in Heavily Doped As-Grown Czochralski Silicon

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